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Pulsed electron-beam source for high-resolution high-throughput microlithography

机译:高分辨率高通量微光刻的脉冲电子束源

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Abstract: Research and development of a broad area ($GRT 1 cm diameter), high brightness (approximately 10$+7$/ A/cm$+2$/ rad$+2$/), high current density ($GRT 50 A/cm$+2$/), pulsed electron beam source for high throughput, high resolution ($LS 0.25 $mu@m) lithography is reported. This novel electron beam source is simple, robust, will cost significantly less than direct write electron beam systems, and allows for high throughput pattern generation ($GRT 30 2 - 3 inch wafers/hr). The electron beam is produced by the back-lighted thyratron (BLT) and is transported through a dielectric tube to achieve focusing and collimation. Replication of 10 $,mu@m line structures in PMMA using a nickel grid mask has been achieved. At present, masks comprised of diamond thin film (1 - 15 $mu@m) membranes on a silicon substrate are being fabricated to study the replication of submicrometer structures in PMMA. In this case, of primary importance are mask heating and deformation. !16
机译:摘要:广域(直径1厘米的GRT),高亮度(大约10 $ + 7 $ / A / cm $ + 2 $ / rad $ + 2 $ /),高电流密度($ GRT 50)的研究与开发报道了一种用于高通量,高分辨率($ LS 0.25 $μm)光刻的脉冲电子束源A / cm $ + 2 $ /。这种新颖的电子束源简单,坚固,比直接写入电子束系统的成本低得多,并且可以产生高通量的图案($ GRT 30 2-3英寸晶圆/小时)。电子束由背光晶闸管(BLT)产生,并通过介电管传输以实现聚焦和准直。使用镍栅板掩模已经实现了在PMMA中复制10微米线结构。目前,正在制造由在硅衬底上的金刚石薄膜(1-15μm)膜组成的掩模,以研究亚微米结构在PMMA中的复制。在这种情况下,最重要的是掩模的加热和变形。 !16

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