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首页> 外文会议>Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing IV >Overlay measurement and analysis of x-ray/optical lithography for mix-and-match device a
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Overlay measurement and analysis of x-ray/optical lithography for mix-and-match device a

机译：混合匹配设备的X射线/光学光刻的叠加测量和分析

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Abstract: A joint Motorola/IBM experiment was performed in mix-and-match lithography across widely separated locations. A simple pattern placement metrology data set was created, and x-ray masks were manufactured according to this data. The same data was converted into a 5x reticle and optically stepped on wafers. The x-ray mask was designed to print upon two optical fields with one x-ray exposure. The x-ray mask was aligned to the wafers to produce box-in-box images for overlay metrology. The main overlay problems encountered were systematic offsets between x-ray and optical images, and average magnification error of approximately 8 ppm. The magnification error is substantial because of the 3$DGR@C temperature difference between the optical stepper stage and the x-ray mask-writer. In an actual device run, the magnification differences will be removed by compensation in the e-beam writing of the x-ray mask. Offsets will be removed by use of a send-ahead wafer to determine the correct offset alignment in the x-ray stepper. !7
机译：摘要：摩托罗拉/ IBM的联合实验是在广泛分开的位置采用混合匹配光刻技术进行的。创建了一个简单的图案放置度量数据集，并根据该数据制作了X射线罩。相同的数据被转换为5x掩模版，并在晶片上进行光学步进。 X射线光罩设计为在一次曝光的两个光场上进行打印。将X射线光罩对准晶圆，以产生用于叠加计量的盒中图像。遇到的主要重叠问题是X射线和光学图像之间的系统偏移以及大约8 ppm的平均放大率误差。放大误差很大，因为光学步进器台和X射线光罩写入器之间存在3 $ DGR @ C的温差。在实际的设备运行中，将通过补偿X射线罩的电子束写入来消除倍率差异。偏移将通过使用预送晶圆来确定，以确定X射线步进器中的正确偏移对齐方式。 ！7

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