Effects of illumination system aberrations on proximity XRL images

机译：照明系统像差对邻近XRL图像的影响

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Abstract: rrations of a typical condenser system for proximity X-ray lithography are obtained through ray-tracing and their effect on the overlay and linewidth control is analyzed. The main effect of the illumination systems aberrations is run-out error due to the slope of the wavefront aberration and the error is of the order of 2 nm.!7

机译：摘要：通过射线追踪获得了典型的用于近距离X射线光刻的聚光系统的比例，并分析了它们对覆盖和线宽控制的影响。照明系统像差的主要影响是由于波前像差的斜率而引起的跳动误差，该误差约为2 nm。！7

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《Electron-Beam, X-Ray, and Ion-Beam Submicrometer Lithographies for Manufacturing III》|1993年|p.320-334|共15页
会议地点 San Jose CA(US)
作者
Jerry Z. Guo; Univ. of Wisconsin/Madison; Stoughton; WI; USA; JiaBei Xiao; Univ. of Wisconsin/Madison; Madison; WI; USA; Franco Cerrina; Univ. of Wisconsin/Madison; Stoughton; WI; USA; Whitson G. Waldo; Motorola; Inc.; Stoughton; WI; USA.;
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正文语种 eng
中图分类自动化技术、计算机技术;
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4. Effects of illumination system aberrations on proximity XRL images [C] . Jerry Z. Guo, JiaBei Xiao, Franco Cerrina, Conference on electron-beam, x-ray, and lon-beam submicrometer lithographies for manufacturing . 1993

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Effects of illumination system aberrations on proximity XRL images

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