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Multiplier circuit with improved linearity using FGMOS transistors

机译：使用FGMOS晶体管提高线性度的乘法器电路

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An original voltage multiplier circuit will be presented. The circuit is implemented in 0.35um CMOS technology and, in order to improve its frequency response, it is based exclusively on MOS transistors working in saturation region. The utilization of a FGMOST (Floating Gate MOS Transistor) for replacing the classical MOS devices allows obtaining an important reduction of the circuit complexity and, as a result, of the silicon occupied area. The SPICE simulation using the previous mentioned technological parameters confirms the theoretical estimated results, showing an excellent linearity of the new proposed CMOS voltage multiplier circuit.

机译：将展示原始的电压倍增器电路。该电路采用0.35um CMOS技术实现，并且为了改善其频率响应，它完全基于工作在饱和区的MOS晶体管。利用FGMOST（浮栅MOS晶体管）代替传统的MOS器件可以显着降低电路复杂性，从而减少硅的占用面积。使用前面提到的技术参数进行的SPICE仿真证实了理论上的估计结果，显示了新提出的CMOS电压倍增器电路的出色线性度。

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《ELMAR, 2009. ELMAR '09》|2009年|159-162|共4页
会议地点 Zadar(YU);Zadar(YU)
作者
Popa Cosmin;
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作者单位

University Politehnica of Bucharest, Romania, 187 Ion Mihalache, Romania;

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equivalent FGMOS device; linearization technique; multiplier circuit; second-order effects;

机译：等效FGMOS器件线性化技术乘法电路二阶效应;

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1. Low power FGMOS-based four-quadrant current multiplier circuits [J] . Maryan Mohammad Moradinezhad, Azhari Seyed Javad, Ghanaatian Ahmad Analog Integrated Circuits and Signal Processing . 2018,第1期

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2. A New Low Voltage Analog Circuit Model for Hodgkin-Huxley Neuron Employing FGMOS Transistors [J] . Salmanpour Ava, Farshidi Ebrahim, Asl Karim Ansari Journal of circuits, systems and computers . 2018,第9期

机译：采用FGMOS晶体管的霍奇金-赫克斯利神经元的新型低压模拟电路模型
3. Low Power and Low Voltage Circuit Design with the FGMOS Transistor [J] . E. Rodriguez-Villegas Electronics Letters . 2007,第7期

机译：采用FGMOS晶体管的低功耗和低压电路设计
4. Multiplier Circuit with Improved Linearity Using FGMOS Transistors [C] . Cosmin Popa International Symposium ELMAR . 2009

机译：使用FGMOS晶体管具有改进的线性的乘法器电路
5. Microwave Nonlinear Modeling and Active Frequency Multiplier Design for High Power Silicon-Carbide and Gallium-Nitride Field-Effect Transistors. [D] . Yuk, Kelvin Shing-Tak. 2012

机译：大功率碳化硅和氮化镓场效应晶体管的微波非线性建模和有源倍频器设计。
6. Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors [O] . Peng Cui, Yuanjie Lv, Huan Liu, -1

机译：AlGaN / GaN异质结构场效应晶体管中的极化库仑场散射改善了线性度
7. Behavioral Model of Silicon Photo-Multipliers Suitable for Transistor-Level Circuit Simulation [O] . Gianluca Giustolisi, Paolo Finocchiaro, Alfio Pappalardo, 2021

机译：适用于晶体管电平电路仿真的硅光倍增器的行为模型
8. Coded Circuit Analysis. Volume II. Transistor and Diode Equivalent Circuits for Nonlinear Analysis [R] . Katz, R. S. 1967

机译：编码电路分析。第二卷。用于非线性分析的晶体管和二极管等效电路

Multiplier circuit with improved linearity using FGMOS transistors

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