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Monolithic CMOS-MEMS integration for high-g accelerometers

机译:用于高g加速度计的单片CMOS-MEMS集成

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摘要

This paper highlights work-in-progress towards the conceptualization, simulation, fabrication and initial testing of a silicon-germanium (SiGe) integrated CMOS-MEMS high-g accelerometer for military, munition, fuze and shock measurement applications. Developed on IMEC's SiGe MEMS platform, the MEMS offers a dynamic range of 5,000 g and a bandwidth of 12 kHz. The low noise readout circuit adopts a chopper-stabilization technique implementing the CMOS through the TSMC 0.18 μm process. The device structure employs a fully differential split comb-drive set up with two sets of stators and a rotor all driven separately. Dummy structures acting as protective over-range stops were designed to protect the active components when under impacts well above the designed dynamic range.
机译:本文重点介绍了用于军事,弹药,引信和冲击测量应用的硅锗(SiGe)集成CMOS-MEMS高克加速度计的概念化,仿真,制造和初始测试的工作进展。 MEMS是在IMEC的SiGe MEMS平台上开发的,动态范围为5,000 g,带宽为12 kHz。低噪声读出电路采用斩波稳定技术,通过台积电(TSMC)0.18μm工艺实现CMOS。该设备结构采用全差速分体梳齿驱动装置,该装置具有两组分别独立驱动的定子和转子。用作保护超范围挡块的虚拟结构旨在在受到远高于设计动态范围的冲击时保护活动部件。

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