...
首页> 外文期刊>Micro and Nano Systems Letters >Fabrication and characterization of monolithic piezoresistive high-g three-axis accelerometer
【24h】

Fabrication and characterization of monolithic piezoresistive high-g three-axis accelerometer

机译:单片压阻高克三轴加速度计的制作与表征

获取原文
           

摘要

We report piezoresistive high-g three-axis accelerometer with a single proof mass suspended by thin eight beams. This eight-beam design allows load-sharing at high-g preventing structural breakage, as well as the symmetric arrangement of piezoresistors. The device chip size is 1.4?mm?×?1.4?mm?×?0.51?mm. Experimental results show that the sensitivity in X-, Y- and Z-axes are 0.2433, 0.1308 and 0.3068?mV/g/V under 5?V applied and the resolutions are 24.2, 29.9 and 25.4?g, respectively.
机译:我们报告了压阻高g三轴加速度计,其单质量证明物由八根细光束悬​​挂。这种八光束设计允许高g的负载分担,防止结构破裂以及压敏电阻的对称布置。器件芯片尺寸为1.4×mm××1.4×mm××0.51×mm。实验结果表明,在施加5?V电压下,X,Y和Z轴的灵敏度分别为0.2433、0.1308和0.3068?mV / g / V,分辨率分别为24.2、29.9和25.4?g。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号