Single crystallization of Ba_8Al_xSi_(46-x) clathrate by using the flux Czochralski method

机译：通量直拉法使Ba_8Al_xSi_（46-x）笼形物单晶化

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We have synthesized single crystalline Ba_8Al_xSi_(46-x) clathrates by using the flux Czochralski (CZ) method with Al-rich melt. The specific electric resistivity, the Seebeck coefficient and the power factor of single crystalline Ba_8Al_(14)Si_(32) were 0.73 mΩcm,70.0μV/K and 6.8×l0~(-4) V~2/K~2Ωm, respectively. These values are higher than that of single crystalline Ba_8Al_(12)Si_(34) clathrate because of the reduced carrier concentration. It is indicated that Al contents and the carrier concentration of single crystalline Ba_8Al_xSi_(46-x) can be controlled by using the flux Czochralski method.

机译：我们使用富铝熔体的通量直拉法（CZ）合成了单晶Ba_8Al_xSi_（46-x）笼形物。单晶Ba_8Al_（14）Si_（32）的比电阻率，塞贝克系数和功率因数分别为0.73mΩcm，70.0μV/ K和6.8×l0〜（-4）V〜2 / K〜2Ωm。这些值高于单晶Ba_8Al_（12）Si_（34）笼形物的值，因为载流子浓度降低。结果表明，可以通过流量直拉法控制Ba_8Al_xSi_（46-x）单晶的Al含量和载流子浓度。

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《Energy harvesting-recent advances in materials, devices and applications》|2011年|p.131-135|共5页
会议地点 San Francisco CA(US);San Francisco CA(US)
作者
Yusuke Nakakohara; Naoki Mugita; Yuya Nagatomo; Makoto Saisho; Teruaki Motooka; Ryo Teranishi; Shinji Munetoh;
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Department of Materials Science and Engineering, Kyushu University, 744Motooka, Fukuoka, 819-0395, Japan;

Department of Materials Science and Engineering, Kyushu University, 744Motooka, Fukuoka, 819-0395, Japan;

Department of Materials Science and Engineering, Kyushu University, 744Motooka, Fukuoka, 819-0395, Japan;

Department of Materials Science and Engineering, Kyushu University, 744Motooka, Fukuoka, 819-0395, Japan;

Cleanroom Laboratory Facility, Kyushu University 8-7Yayoigaoka,Tosu, Saga 841-0005, Japan;

Department of Materials Science and Engineering, Kyushu University, 744Motooka, Fukuoka, 819-0395, Japan;

Department of Materials Science and Engineering, Kyushu University, 744Motooka, Fukuoka, 819-0395, Japan;

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专利

1. Single crystallization of Ba_8Al_xSi_(46-x) clathrate for improvement of thermoelectric properties [J] . Naoki Mugita, Yusuke Nakakohara, Ryo Teranishi, Journal of Materials Research . 2011,第15期

机译：Ba_8Al_xSi_（46-x）笼形物的单晶化以改善热电性能
2. Flux Crystallization of Pb(Mg_(1/3)Nb_(2/3))O_3 Single Crystals by the Czochralski Method [J] . L. M. Rudkovskaya, V. N. Rudkovskii, V. P. Sakhnenko, Crystallography reports . 2014,第2期

机译：Czochralski方法结晶Pb（Mg_（1/3）Nb_（2/3））O_3单晶
3. Numerical simulation of the crystallization front inversion in oxide single crystals grown from melt using the Czochralski method [J] . Mamedov VM, Yuferev VS Technical physics letters: Letters to the Russian journal of applied physics . 2008,第7期

机译：Czochralski法从熔体中生长的氧化物单晶中晶化反演的数值模拟
4. Single crystallization of Ba_8Al_xSi_(46-x) clathrate by using the flux Czochralski method [C] . Yusuke Nakakohara, Naoki Mugita, Yuya Nagatomo, Symposium on energy harvesting-recent advances in materials, devices and applications . 2012

机译：使用助焊剂Czochralski方法单一结晶Ba_8Al_XSI_（46-X）Clathrate
5. Modeling, optimization and control of the Bridgman and Czochralski crystallization processes. [D] . Irizarry-Rivera, Roberto. 1995

机译：Bridgman和Czochralski结晶过程的建模，优化和控制。
6. Efficient 1 µm Laser Emission of Czochralski-Grown Nd:LGSB Single Crystal [O] . Catalina-Alice Brandus, Stefania Hau, Alin Broasca, 2019

机译：Czochralski-Grown Nd：LGSB单晶的高效1 µm激光发射
7. Predicting ground-state configurations and electronic properties of the thermoelectric clathrates Ba$_{8}$Al$_{x}$Si$_{46-x}$ and Sr$_{8}$Al$_{x}$Si$_{46-x}$ [O] . Troppenz, Maria, Rigamonti, Santiago, Draxl, Claudia 2017

机译：预测基态配置和电子特性热电包合物Ba $ _ {8} $ al $ _ {x} $ si $ _ {46-x} $和 sR $ _ {8} $铝$ _ {X} $硅$ _ {46-X} $

Single crystallization of Ba_8Al_xSi_(46-x) clathrate by using the flux Czochralski method

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