A Stable Two-Port Resonance Phase Transistor Amplifier

机译：稳定的两端口谐振相位晶体管放大器

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摘要

In this paper we present a stable amplifier topology for resonance phase transistors (RPT). The RPT is an enhanced heterojunction bipolar transistor (HBT), having a positive gain far beyond its transit frequency f_T. However, due to its resonant character, the RPT is a potentially instable device, and therefore does not allow to realize stable amplifiers in a straightforward design. The use of the cascode topology shows a considerable improvement of the stability and increases the maximum stable gain by 21 dB.

机译：在本文中，我们介绍了用于谐振相位晶体管（RPT）的稳定放大器拓扑。 RPT是增强型异质结双极晶体管（HBT），其正增益远远超过其渡越频率f_T。但是，由于RPT的谐振特性，它是一种潜在的不稳定器件，因此不允许在简单的设计中实现稳定的放大器。共源共栅拓扑的使用显示了稳定性的显着提高，并使最大稳定增益增加了21 dB。

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来源
《European Microwave Conference vol.2; 20041011-14; Amsterdam(NL)》|2004年|P.933-936|共4页
会议地点 Amsterdam(NL)
作者
Robert Wanner; Peter Russer;
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作者单位

Technische Universitaet Muenchen, Lehrstuhl fuer Hochfrequenztechnik Arcisstrasse 21, 80333 Muenchen, Germany;

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会议组织
原文格式 PDF
正文语种 eng
中图分类无线通信;雷达;
关键词
resonance phase transistor; transit frequency; cascode circuit; stability;

机译：谐振相位晶体管;传输频率;级联电路;稳定性;

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A Stable Two-Port Resonance Phase Transistor Amplifier

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