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首页> 外文学位 >Behavioral modeling of zinc-oxide, thin-film, field-effect transistors and the design of pixel driver, analog amplifier, and low-noise RF amplifier circuits.
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Behavioral modeling of zinc-oxide, thin-film, field-effect transistors and the design of pixel driver, analog amplifier, and low-noise RF amplifier circuits.

机译：氧化锌，薄膜，场效应晶体管的行为建模以及像素驱动器，模拟放大器和低噪声RF放大器电路的设计。

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摘要

Zinc-oxide (ZnO) is of great interest due to transparent properties, high breakdown voltages, and low cost. Behavioral modeling is presented in this dissertation to model ZnO thin-film field-effect transistor (FET) drain current versus gate-source overdrive voltage. Initial findings show that in "strong inversion," saturation, the drain current equation reveals a quartic-law dependency on gate-source overdrive voltage instead of square-law dependency seen in complementary metal-oxide semiconductor (CMOS) with no mobility reduction effects. This is postulated to result from the ZnO mobility showing a square-law increase with gate-source overdrive voltage. A "strong inversion," saturation model having +/-1.6% deviation from measured data is created in verilog-A to simulate and design circuits. Circuits include a fabricated and measured pixel driver circuit sinking 28 muA of current while only having a gate area of 20 mum 2. This ZnO thin-film FET pixel driver is believed to have the highest current density reported at the time of this writing. Also, the first known ZnO thin-film FET analog amplifier is analytically designed for a gain of 3 V/V at 10 kHz while drawing only 8 muA of supply current. Finally, the first known ZnO thin-film FET low-noise RF amplifier is designed, utilizing scattering parameters measured at the Air Force Research Laboratory on a device with minimum channel length of 1.25 mum. This amplifier has a small-signal gain of 12.6 dB at 13.56 MHz, and a current drain of 268.4 mA at a drain voltage of 13 V.
机译：由于透明特性，高击穿电压和低成本，氧化锌（ZnO）引起了人们的极大兴趣。本文提出了行为建模方法，以对ZnO薄膜场效应晶体管（FET）漏极电流与栅极-源极过驱动电压之间的关系进行建模。初步发现表明，在“强反演”饱和状态下，漏极电流方程式揭示了对栅源极过驱动电压的四次律依赖性，而不是互补金属氧化物半导体（CMOS）中所见的平方律依赖性，而没有迁移率降低的影响。推测这是由于ZnO迁移率随栅极-源极过驱动电压的平方律增加而导致的。在verilog-A中创建了一个与测量数据有+/- 1.6％偏差的“强反演”饱和度模型，以仿真和设计电路。电路包括一个经过制造和测量的像素驱动器电路，该电路吸收28μA的电流，而栅极面积仅为20μm2。据信，在撰写本文时，此ZnO薄膜FET像素驱动器具有最高的电流密度。同样，第一个已知的ZnO薄膜FET模拟放大器经过分析设计，在10 kHz时增益为3 V / V，而仅消耗8μA的电源电流。最后，利用在空军研究实验室在最小通道长度为1.25毫米的设备上测量的散射参数，设计了第一个已知的ZnO薄膜FET低噪声RF放大器。该放大器在13.56 MHz时的小信号增益为12.6 dB，在13 V的漏极电压下的电流消耗为268.4 mA。

著录项

  • 作者

    Calder, Leroy Alfred, III.;

  • 作者单位

    The University of North Carolina at Charlotte.;

  • 授予单位 The University of North Carolina at Charlotte.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2010
  • 页码 102 p.
  • 总页数 102
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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