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首页> 外文会议>European Photovoltaic Solar Energy Conference; 20060904-08; Dresden(DE) >INFLUENCE OF POST-DEPOSITION TREATMENTS OF ABSORBER LAYERS ON POLY-SI THIN-FILM SOLAR CELLS ON GLASS GROWN BY ECRCVD
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INFLUENCE OF POST-DEPOSITION TREATMENTS OF ABSORBER LAYERS ON POLY-SI THIN-FILM SOLAR CELLS ON GLASS GROWN BY ECRCVD

机译：ECRCVD沉积后处理吸附层对玻璃生长的聚硅薄膜太阳能电池的影响

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摘要

The epitaxial thickening of a thin polycrystalline Si (poly-Si) film (seed layer) is a promising approach to realize an absorber layer of a poly-Si thin-film solar cell on glass. Such cell concept combines the benefits of crystalline Si and the high potential for cost reduction of a thin-film technology. Here, we discuss the influence of post-deposition treatments on solar cells with absorber layers grown by electron-cyclotron resonance chemical vapour deposition (ECRCVD). Defect annealing was used to improve the structural quality of the absorber layers. For this, we used rapid thermal annealing (RTA) processes. Annealing times (up to 400 s) were applied at temperatures of up to 950℃. Defect passivation treatments were carried out at temperatures of about 350℃ to passivate the remaining defects in the films by hydrogen. The impact of both treatments on the solar cell parameter will be discussed focusing on RTA. Open-circuit voltages of up to 361 mV were achieved without hydrogenation showing the potential of ECRCVD-grown absorbers. Applying both treatments resulted so far in an increase of V_(OC) to about 400 mV. Because of the fact, that both post-treatments (particularly hydrogenation) are still not yet optimized, further improvements can be expected.
机译：薄的多晶硅膜（种子层）的外延增厚是在玻璃上实现多晶硅薄膜太阳能电池的吸收体层的有前途的方法。这种电池概念结合了晶体硅的优势和降低薄膜技术成本的巨大潜力。在这里，我们讨论沉积后处理对通过电子回旋共振化学气相沉积（ECRCVD）生长的吸收层的太阳能电池的影响。使用缺陷退火来改善吸收层的结构质量。为此，我们使用了快速热退火（RTA）工艺。在最高950℃的温度下进行退火时间（最高400 s）。在约350℃的温度下进行缺陷钝化处理，以通过氢钝化膜中的剩余缺陷。两种处理对太阳能电池参数的影响将集中讨论RTA。无需氢化即可实现高达361 mV的开路电压，显示出ECRCVD生长的吸收器的潜力。到目前为止，两种方法的应用都使V_（OC）增加到约400 mV。由于这一事实，两个后处理（特别是氢化）仍未优化，因此可以期待进一步的改进。

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