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首页> 外文会议>European Photovoltaic Solar Energy Conference; 20060904-08; Dresden(DE) >Highly Efficient CuInS_2-based solar cell devices with an optimized Cd-free window structure
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Highly Efficient CuInS_2-based solar cell devices with an optimized Cd-free window structure

机译：具有优化的无镉窗口结构的高效基于CuInS_2的太阳能电池设备

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ZnS thin films deposited in a chemical bath have been studied for use as buffer layers in CuInS_2 ("CIS") based solar cell devices. The ZnS films were grown on CIS using aqueous solutions containing zinc sulphate (ZnSO_4 · 7 H_2O) mixed with thiourea (SC(NH_2)_2 and ammonia (NH3) at 70-80℃. In order to investigate the growth kinetics as well as the composition of the deposited nominal ZnS layers on CIS absorbers the deposition time was varied. A respective sample series was characterized by x-ray photoelectron spectroscopy (XPS) and x-ray excited Auger electron spectroscopy (XAES). It was found that the Zn-compound buffer layer is actually a bi-layer of an ultra-thin ZnS film followed by a mixture of ZnS and ZnO. The ZnS/(ZnS+ZnO) ratio of the latter Zn(S,O) layer was determined to be around 80 %. Corresponding solar cell devices with a [Zn(S,O)/ZnS] bi-layer buffer reach only then comparable efficiencies than references with CdS buffer layers when they undergo a light-soaking treatment prior to the characterization of their photovoltaic performance. However, if one further modifies the ZnO:Al/i-ZnO/CdS standard window (and thus optimizes it towards a competitive Cd-free window) by replacing not only the CdS by a [Zn(S,O)/ZnS] buffer but also by application of a (Zn,Mg)O instead of a i-ZnO layer, respective Cd-free solar cells reach the efficiencies of references with standard window without any (or reduced) light-soaking. This is demonstrated for devices on the laboratory-scale and for mini-modules. Temperature dependent current-voltage measurements are used to determine the dominant recombination mechanism of CIS based solar cells with this alternative ZnO:Al/(Zn,Mg)O/[Zn(S,O)/ZnS] window structure.
机译：已经研究了沉积在化学浴中的ZnS薄膜用作基于CuInS_2（“ CIS”）的太阳能电池设备的缓冲层。 ZnS薄膜是在70-80℃下，将含有硫酸锌（ZnSO_4·7 H_2O）和硫脲（SC（NH_2）_2和氨水（NH3）的水溶液）在CIS上生长的，以研究其生长动力学和在CIS吸收体上沉积的标称ZnS层的组成变化了沉积时间，分别通过X射线光电子能谱（XPS）和X射线激发俄歇电子能谱（XAES）对样品系列进行了表征。复合缓冲层实际上是超薄ZnS膜的双层，然后是ZnS和ZnO的混合物，后一个Zn（S，O）层的ZnS /（ZnS + ZnO）比确定为80当具有[Zn（S，O）/ ZnS]双层缓冲层的相应太阳能电池器件在表征其光伏性能之前进行光浸处理时，其效率只有与CdS缓冲层参考层相当的效率。但是，如果进一步修改ZnO：Al / i-ZnO / CdS标准通过不仅用[Zn（S，O）/ ZnS]缓冲液替换CdS，而且通过使用（Zn，Mg）O代替i- ZnO层，相应的无Cd太阳能电池在没有任何（或减少的）光浸透的情况下，达到了具有标准窗口的参考效率。实验室规模的设备和微型模块都对此进行了演示。基于温度的电流-电压测量值用于确定具有这种ZnO：Al /（Zn，Mg）O / [Zn（S，O）/ ZnS]窗口结构的CIS基太阳能电池的主要重组机制。

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