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Device for generating electricity using solar cells, has series circuit of strings of solar cells, where each string of solar cells is anti-parallely switched by bypass diode that is designed as highly efficient Schottky diodes
Device for generating electricity using solar cells, has series circuit of strings of solar cells, where each string of solar cells is anti-parallely switched by bypass diode that is designed as highly efficient Schottky diodes
The device has a series circuit of strings (10, 20, 30) of solar cells (11, 13). Each string of solar cells is anti-parallely switched by a bypass diode that is designed as highly efficient Schottky diodes (10a, 20a, 30a) e.g. trench metal oxide semiconductor (MOS) barrier Schottky diode (TMBS) (RTM: low forward drop high voltage rectifier) and trench junction barrier Schottky diode (TJBS). Barrier height of the Schottky diode is in a range of 0.6-0.8 electron volts. Barrier of the Schottky diodes is made from nickel or nickel silicide.
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