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首页> 外文期刊>Journal of Applied Physics >Schottky barrier height switching in thin metal oxide films studied in diode and solar cell device configurations
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Schottky barrier height switching in thin metal oxide films studied in diode and solar cell device configurations

机译：在二极管和太阳能电池装置配置中研究的金属氧化物薄膜中的肖特基势垒高度转换

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摘要

We investigate changes in the properties of 8 nm thin metal oxide (Nb-doped SrTiO_3) films in response to relatively high voltage or light soaking under three Sun excitation. We measure the current-voltage behavior of metal|insulator|metal type diodes and use a device model to relate changes in device behavior to the metal oxide film properties. We find that the device's resistive switching is mainly associated with shifts (switching) of the metal oxide work function between high and low injection barrier states. The method presented here can be used for in situ monitoring of the contact work function and for quantifying the uniformity of this value across the device. We also discuss the effect of non-uniform work function on the apparent diode's ideality factor.
机译：我们调查了8 nm薄金属氧化物（掺Nb的SrTiO_3）薄膜在3个太阳激发下响应相对高电压或光浸泡特性的变化。我们测量金属型二极管的电流-电压行为，并使用器件模型将器件行为的变化与金属氧化物膜的性能联系起来。我们发现，器件的电阻切换主要与金属氧化物功函数在高注入势垒状态和低注入势垒状态之间的转换（转换）有关。此处介绍的方法可用于现场监测接触功函数，并用于量化该值在整个设备中的均匀性。我们还将讨论功函数不均匀对视在二极管的理想因子的影响。

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  • 来源
    《Journal of Applied Physics》 |2015年第5期|054501.1-054501.7|共7页
  • 作者

    Dahvyd Wing; Avner Rothschild; Nir Tessler;

  • 作者单位

    Zisapel Nano-Electronic Center, Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel,Department of Materials Science and Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel;

    Department of Materials Science and Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel;

    Zisapel Nano-Electronic Center, Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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