SIMULATION OF EFFECTS OF LAYER THICKNESS IN AMORPHOUS SILICON SOLAR CELLS ON QUANTUM EFFICIENCY AND ELECTRICAL PARAMETERS

机译：模拟非晶硅太阳能电池层厚度对量子效率和电参数的影响

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Thin film amorphous silicon p~+-i-n~+ configuration cells were examined in this project. A simulation of free carrier profiles for broadband irradiance, based on continuity and current density equations has been carried out. The purpose of this paper is to develop an understanding of the correlation between the effect of i-layer thickness on the electrical behaviour of devices and to investigate the role of chromatic spectra. The effects of collection and recombination velocities, electron and hole mobilities and the i-layer thickness on cell quantum efficiency for the AM1.5G spectrum have been examined. It is shown that the process of a-Si cell optimization is linked with different constraints, which should be taken into consideration.

机译：在该项目中研究了薄膜非晶硅p〜+ -i-n〜+配置单元。基于连续性和电流密度方程，对宽带辐射的自由载波分布进行了仿真。本文的目的是发展对i层厚度对器件电性能的影响之间的相关性的理解，并研究色谱的作用。研究了AM1.5G光谱的收集和复合速度，电子和空穴迁移率以及i层厚度对细胞量子效率的影响。结果表明，非晶硅电池优化过程与不同的约束条件相关，应予以考虑。

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《European Photovoltaic Solar Energy Conference; 20060904-08; Dresden(DE)》|2006年|P.1680-1683|共4页
会议地点 Dresden(DE)
作者
A. Papoutsakis; C. Monokroussos; R. Gottschalg;
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Centre for Renewable Energy Systems Technology (CREST) Department of Electronic and Electrical Engineering, Loughborough University, Loughborough, Leicestershire, LE11 3TU,UK;

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正文语种 eng
中图分类太阳能技术;
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SIMULATION OF EFFECTS OF LAYER THICKNESS IN AMORPHOUS SILICON SOLAR CELLS ON QUANTUM EFFICIENCY AND ELECTRICAL PARAMETERS

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