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首页> 外文期刊>Silicon >Simulating the Role of TCO Materials, their Surface Texturing and Band Gap of Amorphous Silicon Layers on the Efficiency of Amorphous Silicon Thin Film Solar Cells
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Simulating the Role of TCO Materials, their Surface Texturing and Band Gap of Amorphous Silicon Layers on the Efficiency of Amorphous Silicon Thin Film Solar Cells

机译：模拟TCO材料的作用，它们对非晶硅层的表面纹理和带隙，对非晶硅薄膜太阳能电池效率

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摘要

In this work, through modeling we propose how the choice of the TCO material, its texturing and optimization of band gap of a-Si:H layers help to increase the efficiency of a-Si:H solar cells. While selecting plane and textured indium tin oxide (ITO) and zinc oxide (ZnO) as TCOs, the solar cell parameters and performance are examined as a function of band gap of different a-Si:H layers. The optimum band gap values of 2.1 eV, 1.9 eV and 1.85 eV are obtained for p, i and n-layers of a-Si:H with maximum efficiencies of similar to 15.5 % and 17.7 % using plane ITO and ZnO contacts respectively. Interestingly, the conversion efficiency is further increased to similar to 16.3 % and 18.6 % when textured ITO and textured ZnO are used as TCOs. Moreover the higher efficiencies with ZnO-based contact than ITO-based contact can be explained due to slightly higher drift velocity of holes nearer to the junction and little improved optical properties which may also attributes to the enhanced trapping of the light. These results are very encouraging and may help in developing a-Si:H based solar cell technology for thin films.
机译：在这项工作中，通过建模我们提出了如何选择TCO材料，其纹理化和A-Si带隙的优化：H层有助于提高A-Si：H太阳能电池的效率。在选择平面和纹理铟锡氧化铟锡（ITO）和氧化锌（ZnO）的同时，将太阳能电池参数和性能作为不同A-Si：H层的带隙的函数进行检查。对于P，I和N层，A-Si：H的P，I和N层获得最佳带隙值2.1eV，1.9eV和1.85eV。使用平面ITO和ZnO触点的最大效率为类似于15.5％和17.7％。有趣的是，当纹理ITO和纹理ZnO被用作TCO时，转换效率进一步增加到16.3％和18.6％。此外，由于较近接线点的孔较近的孔的漂移速度略高，并且可以将光的光学性质较近的漂移速度略微较高，并且还可以将其归因于光的增强捕获，因此可以通过基于ITO基接触的效率较高的效率。这些结果非常令人鼓舞，可能有助于开发基于Si：H基于Si的太阳能电池技术，用于薄膜。

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  • 来源
    《Silicon》 |2017年第1期|共10页
  • 作者

    Sharma Mansi; Chaudhary Deepika; Dwivedi Neeraj; Sudhakar S.; Kumar Sushil;

  • 作者单位

    CSIR Network Inst Solar Energy CSIR Natl Phys Lab Dr KS Krishnan Marg New Delhi 110012 India;

    CSIR Network Inst Solar Energy CSIR Natl Phys Lab Dr KS Krishnan Marg New Delhi 110012 India;

    Natl Univ Singapore Dept Elect &

    Comp Engn Singapore Singapore;

    CSIR Network Inst Solar Energy CSIR Natl Phys Lab Dr KS Krishnan Marg New Delhi 110012 India;

    CSIR Network Inst Solar Energy CSIR Natl Phys Lab Dr KS Krishnan Marg New Delhi 110012 India;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无机化学;
  • 关键词

    a-Si:H; p-i-n Solar cell; Band gap; TCO;

    机译：A-Si：H;P-I-N太阳能电池;带隙;TCO;

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