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Implications of carrier mobility limitations for GaAs as an x-ray detector

机译：GaAs作为X射线探测器的载流子迁移率限制的含义

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Abstract: Theoretically, gallium arsenide detectors offer an attractive alternative to silicon for the high energy x-ray astronomer, due to the greater absorption power of the material. However, in practice, GaAs detectors made from bulk-grown crystals have a spectral resolution which falls well short of both expectation and that achieved by silicon detectors of comparable thickness. In contrast, a detector fabricated from GaAs grown by the liquid phase epitaxial (LPE) process displays full charge collection with a resolution in agreement with that expected from measurements of leakage current and device capacitance. Experimental results are presented showing the level of spectral resolution possible in a variety of GaAs detectors, including Liquid Enhancement Czochralski material from various manufacturers, Vertical Bridgeman and LPE material. Both the detector performance and the electrical characteristics (voltage- current, noise, etc) have been explored for each device.!12
机译：摘要：理论上，由于砷化镓探测器具有更高的材料吸收能力，因此它为高能X射线天文学家提供了一种有吸引力的硅替代品。然而，实际上，由块状生长的晶体制成的GaAs检测器的光谱分辨率远低于预期，并且与可比厚度的硅检测器所达到的光谱分辨率均远未达到预期。相比之下，由通过液相外延（LPE）工艺生长的GaAs制成的检测器可显示完整的电荷收集，其分辨率与泄漏电流和器件电容的测量结果相符。实验结果表明，在各种GaAs检测器中，包括来自不同制造商的Liquid Enhancement Czochralski材料，Vertical Bridgeman和LPE材料，其光谱分辨率的水平。对每种设备都探讨了检测器性能和电气特性（电压，电流，噪声等）！12

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