• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>Extreme ultraviolet (EUV) lithography VII >Improved Ru/Si multilayer reflective coatings for advanced extreme ultraviolet lithography photomasks
【24h】

Improved Ru/Si multilayer reflective coatings for advanced extreme ultraviolet lithography photomasks

机译：改进的Ru / Si多层反射涂层，用于先进的极端紫外光刻光掩模

获取原文
获取原文并翻译 | 示例
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Extreme ultraviolet (EUV) lithography with reflective photomasks continues to be a potential patterning technology for high volume manufacturing at the 7 nm technology node and beyond. EUV photomasks with alternative materials to the commonly used Mo/Si multilayer (ML) reflector and patterned Ta-based absorber (both of which are known to require shadow effect corrections and lead to large through-focus pattern placement errors) are being actively explored. Because the reflective bandwidth of a Ru/Si ML is significantly wider than the reflective bandwidth of a Mo/Si ML and the effective reflectance plane in Ru/Si is closer to the ML surface, Ru/Si ML coatings may be viable alternatives to the Mo/Si ML coatings that are commercially available today because they will lead to smaller mask 3D effects. In this paper, increases in the peak reflectivity and the reflective bandwidth of Ru/Si ML reflectors by using B_4C interlayers to improve the Ru-Si interfaces are discussed. The conclusions of this paper are supported with the results of both experimental measurements and rigorous simulations.
机译：带有反射式光掩模的极紫外（EUV）光刻技术仍然是在7 nm技术节点及以后进行大批量生产的潜在图形技术。人们正在积极探索具有替代常用Mo / Si多层（ML）反射器和图案化Ta基吸收剂（已知两者均需要阴影效应校正并导致较大的贯穿焦点图案放置误差）的EUV光掩模。由于Ru / Si ML的反射带宽明显大于Mo / Si ML的反射带宽，并且Ru / Si中的有效反射率平面更接近ML表面，因此Ru / Si ML涂层可能是可行的替代选择。 Mo / Si ML涂层如今可商购，因为它们将导致较小的掩模3D效果。本文讨论了通过使用B_4C中间层来改善Ru-Si界面来提高Ru / Si ML反射器的峰值反射率和反射带宽。本文的结论得到了实验测量结果和严格模拟结果的支持。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号