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EUV Patterning Successes and Frontiers

机译：EUV模式化的成功与前沿

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摘要

The feature scaling and patterning control required for the 7nm node has introduced EUV as a candidate lithography technology for enablement. To be established as a front-up lithography solution for those requirements, all the associated aspects with yielding a technology are also in the process of being demonstrated, such as defectivity process window through patterning transfer and electrical yield. This paper will review the current status of those metrics for 7nm at IBM, but also focus on the challenges therein as the industry begins to look beyond 7nm. To address these challenges, some of the fundamental process aspects of holistic EUV patterning are explored and characterized. This includes detailing the contrast entitlement enabled by EUV, and subsequently characterizing state-of-the-art resist printing limits to realize that entitlement. Because of the small features being considered, the limits of film thinness need to be characterized, both for the resist and underlying SiARC or inorganic hardmask, and the subsequent defectivity, both of the native films and after pattern transfer. Also, as we prepare for the next node, multi-patterning techniques will be validated in light of the above, in a way that employs the enabling aspects of EUV as well. This will thus demonstrate EUV not just as a technology that can print small features, but one where all aspects of the patterning are understood and enabling of a manufacturing-worthy technology.
机译：7nm节点所需的功能缩放和图案控制已引入EUV作为实现的候选光刻技术。为了满足这些要求，将其作为前瞻性光刻解决方案，与生产技术相关的所有方面也都在展示过程中，例如通过图案转移和电产量的缺陷工艺窗口。本文将回顾IBM在7nm上这些指标的当前状态，同时还将重点关注随着行业开始超越7nm而面临的挑战。为了应对这些挑战，对整体EUV图案化的一些基本过程方面进行了探讨和表征。这包括详细介绍由EUV启用的对比度权利，以及随后表征最新的抗蚀剂印刷限制以实现该权利。由于要考虑的特征很小，因此需要对抗蚀剂和下面的SiARC或无机硬掩模的薄膜厚度极限进行表征，并对天然薄膜和图案转印后的缺陷率进行表征。同样，当我们为下一个节点做准备时，将根据上述方法以采用EUV启用方面的方式验证多图案技术。因此，这不仅将证明EUV不仅是一种可以打印细小特征的技术，而且还将展示出构图的所有方面都可以理解并且可以实现具有制造价值的技术。

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  • 来源
    《Extreme ultraviolet (EUV) lithography VII》|2016年|97761O.1-97761O.7|共7页
  • 会议地点 San Jose CA(US)
  • 作者

    Nelson Felix; Dan Corliss; Karen Petrillo; Nicole Saulnier; Yongan Xu; Luciana Meli; Hao Tang; Anuja De Silva; Bassem Hamieh; Martin Burkhardt; Yann Mignot; Richard Johnson; Chris Robinson; Mary Breton; Indira Seshadri; Derren Dunn; Stuart Sieg; Eric Miller; Genevieve Beiq;

  • 作者单位

    IBM Research, 257 Fuller Rd, Albany, NY 12203;

    IBM Research, 257 Fuller Rd, Albany, NY 12203;

    IBM Research, 257 Fuller Rd, Albany, NY 12203;

    IBM Research, 257 Fuller Rd, Albany, NY 12203;

    IBM Research, 257 Fuller Rd, Albany, NY 12203;

    IBM Research, 257 Fuller Rd, Albany, NY 12203;

    IBM Research, 257 Fuller Rd, Albany, NY 12203;

    IBM Research, 257 Fuller Rd, Albany, NY 12203;

    IBM Research, 257 Fuller Rd, Albany, NY 12203;

    IBM Research, 257 Fuller Rd, Albany, NY 12203;

    IBM Research, 257 Fuller Rd, Albany, NY 12203;

    IBM Research, 257 Fuller Rd, Albany, NY 12203;

    IBM Research, 257 Fuller Rd, Albany, NY 12203;

    IBM Research, 257 Fuller Rd, Albany, NY 12203;

    IBM Research, 257 Fuller Rd, Albany, NY 12203;

    IBM Research, 257 Fuller Rd, Albany, NY 12203;

    IBM Research, 257 Fuller Rd, Albany, NY 12203;

    IBM Research, 257 Fuller Rd, Albany, NY 12203;

    GLOBALFOUNDRIES, 257 Fuller Rd, Albany, NY 12203;

    GLOBALFOUNDRIES, 257 Fuller Rd, Albany, NY 12203;

    GLOBALFOUNDRIES, 257 Fuller Rd, Albany, NY 12203;

    GLOBALFOUNDRIES, 257 Fuller Rd, Albany, NY 12203;

    GLOBALFOUNDRIES, 257 Fuller Rd, Albany, NY 12203;

    SAMSUNG, 257 Fuller Rd, Albany, NY 12203;

    SAMSUNG, 257 Fuller Rd, Albany, NY 12203;

    SAMSUNG, 257 Fuller Rd, Albany, NY 12203;

    TEL Technology Center, America, LLC, Albany, NY 12203;

    TEL Technology Center, America, LLC, Albany, NY 12203;

    TEL Technology Center, America, LLC, Albany, NY 12203;

    TEL Technology Center, America, LLC, Albany, NY 12203;

    TEL Technology Center, America, LLC, Albany, NY 12203;

    TEL Technology Center, America, LLC, Albany, NY 12203;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    EUV; lithography; patterning; trilayer; photoresist; RET;

    机译：EUV；光刻图案三层光刻胶RET;

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