首页> 外文会议>Ferroelectric Thin Films XII >Low Temperature Deposition of Ba_(0.96)Ca_(0.04)Ti_(0.84)Zr_(0.16)O_3 Thin Films on Pt Electrodes by RF Magnetron Sputtering
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Low Temperature Deposition of Ba_(0.96)Ca_(0.04)Ti_(0.84)Zr_(0.16)O_3 Thin Films on Pt Electrodes by RF Magnetron Sputtering

机译:射频磁控溅射在Pt电极上低温沉积Ba_(0.96)Ca_(0.04)Ti_(0.84)Zr_(0.16)O_3薄膜

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摘要

Ba_(0.96)Ca_(0.04)Ti_(0.84)Zr_(0.16)O_3 (BCTZ) films acceptor-doped with 0.8 at.% Sc were deposited on Pt/TiO_2/SiO_2/Si substrates using rf magnetron sputtering. Substrate temperatures throughout the fabrication process remained at or below 450℃, which allows this process to be compatible with many materials commonly used in IC manufacturing. In addition, this process made no use of oxygen in the sputter gas or in annealing atmospheres and thus it remains compatible with easily oxidized materials. A relative dielectric constant of 166 was achieved along with a loss tangent of 0.006 to 0.17 at 10 kHz. The tunability of the dielectric constant was greater than 50%. Leakage current densities of 1.6 x 10~(-8) A/cm~2 were observed at 300K with 300 kV/cm of applied electric field. In comparison, Ba_(1-x)Sr_xTiO_3 (BST) films prepared under similar conditions show much greater leakage.
机译:使用射频磁控溅射在Pt / TiO_2 / SiO_2 / Si衬底上沉积掺杂有0.8at。%Sc的Ba_(0.96)Ca_(0.04)Ti_(0.84)Zr_(0.16)O_3(BCTZ)膜。在整个制造过程中,基板温度始终保持在450℃或以下,这使该过程可与IC制造中常用的许多材料兼容。另外,该方法不使用溅射气体或退火气氛中的氧气,因此与易氧化的材料保持相容。在10 kHz时,相对介电常数为166,损耗角正切为0.006至0.17。介电常数的可调性大于50%。在300K / cm施加电场下300K时,漏电流密度为1.6 x 10〜(-8)A / cm〜2。相比之下,在相似条件下制备的Ba_(1-x)Sr_xTiO_3(BST)膜显示出更大的泄漏。

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