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首页> 外文会议>Ferroelectric Thin Films XII >Microwave Properties of Parallel Plate Capacitors based on (Ba,Sr)TiO_3 Thin Films Grown on SiO_2.Al_2O_3 Substrates
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Microwave Properties of Parallel Plate Capacitors based on (Ba,Sr)TiO_3 Thin Films Grown on SiO_2.Al_2O_3 Substrates

机译：SiO_2.Al_2O_3衬底上生长的（Ba，Sr）TiO_3薄膜的平行板电容器的微波特性

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Ba_(0.7)Sr_(0.3)TiO_3 (BST) single and quadruple layer capacitors with Pt electrodes were fabricated together on polycrystalline alumina substrates with a SiO_2-based multicomponent amorphous buffer layer (SiO_2/Al_2O_3). This paper presents the results of the characterization of these capacitors, to demonstrate their suitability for application as decoupling (high value) capacitors and as components in tunable RF applications (e.g., phase shifters and filters). BST films of different compositions, (Ba_(0.7)Sr_(0.3))TiO_3 and (Ba_(0.5)Sr_(0.5))TiO_3, were grown by metal-organic decomposition (MOD) and RF magnetron reactive sputtering. The capacitance density of 90-140 nm thick BST films was in the range of 20 to 70 fF/μm~2. Parallel plate capacitors with areas from 16 μm~2 to 2.25 mm~2 were fabricated using photolithography and ion milling techniques. For large capacitors (0.125 to 2.25 mm~2), capacitance and tan5 were measured at low frequencies (1 KHz - 1 MHz) using an LCR meter. Smaller capacitors (16 μm~2 to 3600 μm~2) were additionally characterized in the frequency range of 50 MHz - 20 GHz. In such case, capacitance, tanδ and equivalent series resistance (ESR) were extracted from two port scattering parameters obtained using a vector network analyzer (VNA). The relationship between dielectric loss, tunability and calculated figure of merit vs. BST composition and deposition temperature was outlined. In addition, loss and ESR at high frequencies was investigated. The typical achieved leakage current density of sputtered BST films for 2.25 mm~2 capacitors fabricated on SiO_2/Al_2O_3 was 7.3x10~(-9) A/cm~2 at 300 kV/cm (65 fF/μm~2), about 2 times lower than for (Ba_(0.7)Sr_(0.3))TiO_3 films deposited by MOD (1.4x10~(-8)A/cm~2 at 300 kV/cm, 34.5 fF/μm~2). Furthermore, the tunability of (Ba_(0.7)Sr_(0.3))TiO_3 deposited by both methods on SiO_2/Al_2O_3 was ～60% at 350 kV/cm.
机译：在具有SiO_2基多组分非晶态缓冲层（SiO_2 / Al_2O_3）的多晶氧化铝基板上，一起制备了具有Pt电极的Ba_（0.7）Sr_（0.3）TiO_3（BST）单层和四层电容器。本文介绍了这些电容器的表征结果，以证明其适合用作去耦（高值）电容器以及可调谐RF应用中的组件（例如移相器和滤波器）。通过金属有机分解（MOD）和射频磁控反应溅射，制备了不同组成的（Ba_（0.7）Sr_（0.3））TiO_3和（Ba_（0.5）Sr_（0.5））TiO_3的BST膜。 90-140 nm厚的BST膜的电容密度在20到70 fF /μm〜2的范围内。采用光刻和离子铣削技术制造了面积为16μm〜2至2.25 mm〜2的平行平板电容器。对于大型电容器（0.125至2.25 mm〜2），使用LCR表在低频（1 KHz-1 MHz）下测量电容和tan5。较小的电容器（16μm〜2至3600μm〜2）还具有50 MHz-20 GHz的频率范围。在这种情况下，从使用矢量网络分析仪（VNA）获得的两个端口散射参数中提取电容，tanδ和等效串联电阻（ESR）。概述了介电损耗，可调性和计算的品质因数与BST组成和沉积温度之间的关系。此外，还研究了高频下的损耗和ESR。在300 kV / cm（65 fF /μm〜2）的条件下，在SiO_2 / Al_2O_3上制造的2.25 mm〜2电容器上溅射BST膜的典型泄漏电流密度为7.3x10〜（-9）A / cm〜2，约为2相较于通过MOD（1.4x10〜（-8）A / cm〜2在300 kV / cm，34.5 fF /μm〜2）沉积的（Ba_（0.7）Sr_（0.3））TiO_3薄膜低3倍。此外，在350 kV / cm下，两种方法在SiO_2 / Al_2O_3上沉积的（Ba_（0.7）Sr_（0.3））TiO_3的可调性约为〜60％。

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