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首页> 外文会议>Ferroelectric Thin Films XII >Crystallization of Sub-100 nm-Thick Bi_(4-x)La_xTi_3O_(12) Films on Silicon Substrates and Their Electrical Properties
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Crystallization of Sub-100 nm-Thick Bi_(4-x)La_xTi_3O_(12) Films on Silicon Substrates and Their Electrical Properties

机译：硅基底上亚100 nm厚的Bi_（4-x）La_xTi_3O_（12）膜的结晶及其电性能

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摘要

Polycrystalline Bi_(4-x)La_xTi_3O_(12) (BUT) thin films were formed on p-Si(lOO) substrates. Crystallization of the film was investigated quantitatively by X-ray diffraction (XRD) and X-ray reflection (XRR) analyses. The film was crystallized onto bismuth-oxide layered perovskite structure when annealing temperatures became higher than 550℃. The annealing time dependence of diffraction intensity and peak width indicated that grain growth occurred during crystallization. Moreover, it was shown that the average crystal dimension in the BUT film reached ca. 60 nm by 120-min annealing. That value is comparable to the BLT thickness. Film thickness and density were evaluated by XRR analysis. Simulation fitting showed that the BLT film was densified and that an interfacial layer was formed during crystallization. Pole figure measurements also suggested that the c-axis of BLT was preferentially oriented to nearly parallel the surface. Clockwise hysteresis loops were observed at room temperature in capacitance-voltage (C-V) characteristics of Au/BLT/p-Si structures. The coercive field and the dielectric constant of 65 nm-thick BLT films crystallized at 550℃ for 60 min were evaluated to be ca. 23 kV/cm and ca. 17, respectively.
机译：在p-Si（100）衬底上形成多晶Bi_（4-x）La_xTi_3O_（12）（BUT）薄膜。通过X射线衍射（XRD）和X射线反射（XRR）分析定量研究了膜的结晶。当退火温度高于550℃时，该薄膜结晶成氧化铋层状钙钛矿结构。退火时间对衍射强度和峰宽的依赖性表明在结晶过程中发生了晶粒长大。此外，显示出BUT膜中的平均晶体尺寸达到约1μm。 60分钟，经120分钟退火。该值与BLT厚度相当。通过XRR分析评价膜的厚度和密度。模拟拟合表明，BLT膜被致密化并且在结晶过程中形成了界面层。极图测量还表明，BLT的c轴优先定向为几乎平行于表面。在室温下，在Au / BLT / p-Si结构的电容-电压（C-V）特性中观察到了顺时针磁滞回线。在550℃结晶60分钟的65nm厚的BLT薄膜的矫顽场和介电常数被评估为约200。 23 kV / cm和17，分别。

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