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Ti-site Substitution Using the Higher-valent Cation for Enhancing the Ferroelectric Properties of Nd~(3+)-substituted Bismuth Titanate Thin Films

机译:使用高价阳离子进行钛位取代以增强Nd〜(3+)取代钛酸铋铋薄膜的铁电性能

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Ti-site substitution using the higher-valent cation was performed on ferroelectric thin films of neodymium-substituted bismuth titanate, (Bi,Nd)_4Ti_3O_(12) (BNT), in order to improve its ferroelectric properties by compensating the space charge in BIT-based crystal. Ti-site-substituted BNT films, (Bi_(3.50)Nd_(0.50))_(1-(x/12))(Ti_(3.00-x)V_x)O_(15) (x = 0 ~ 0.09), were fabricated on (111)Pt/Ti/ SiO_2/(100)Si substrates using a chemical solution deposition (CSD) technique. V~(5+)-substitution enhanced the remanent polarization of BNT film without change in the coercive field. V~(5+)-substitution also exhibited the possibilities for improving the endurance against leakage current and fatigue degradation.
机译:对钕取代钛酸铋(Bi,Nd)_4Ti_3O_(12)(BNT)的铁电薄膜进行了使用高价阳离子的Ti位取代,以通过补偿BIT中的空间电荷来改善其铁电性能基晶体。被Ti取代的BNT薄膜为(Bi_(3.50)Nd_(0.50))_(1-(x / 12))(Ti_(3.00-x)V_x)O_(15)(x = 0〜0.09)。使用化学溶液沉积(CSD)技术在(111)Pt / Ti / SiO_2 /(100)Si衬底上制造的金属膜。 V〜(5+)取代增强了BNT薄膜的剩余极化,而矫顽场不变。 V〜(5 +)-取代也表现出提高耐漏电流和疲劳降解的能力。

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