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首页> 外文会议>Ferroelectric Thin Films XII >Structural and Electrical Investigations of Ferroelectric Lead Strontium Titanate Thin Films and Ceramics
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Structural and Electrical Investigations of Ferroelectric Lead Strontium Titanate Thin Films and Ceramics

机译：铁电钛酸锶锶薄膜和陶瓷的结构和电学研究

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Lead strontium titanate (Pb_xSr_(1-x)TiO_3) (x=0.3-1.0) ceramic targets were prepared by the conventional powder-processing method. Thin films of these compositions were deposited on platinized silicon substrates by pulsed laser deposition technique. X-ray diffraction studies of the ceramic targets showed that the lattice structure changes from tetragonal to cubic phase with the increase of Sr content in PbTiO_3. Raman spectroscopic studies of Pb_xSr_(1-x)TiO_3 (PST) ceramics and thin films showed that the soft mode decreases to lower frequency and finally disappear at around 60-70 at% Sr content, which confirms the tetragonal to cubic phase transition at room temperature. Dielectric constant measured for PST thin films was in the range of 900-1500 at 1 MHz, with maximum value obtained for PST30 thin film. The loss tangents at room temperature were in the range of 0.07-0.1 for PST thin films with different compositions.
机译：钛酸锶锶（Pb_xSr_（1-x）TiO_3）（x = 0.3-1.0）陶瓷靶采用常规粉末加工方法制备。这些组合物的薄膜通过脉冲激光沉积技术沉积在镀铂的硅基板上。陶瓷靶的X射线衍射研究表明，随着PbTiO_3中Sr含量的增加，晶格结构从四方相变为立方相。 Pb_xSr_（1-x）TiO_3（PST）陶瓷和薄膜的拉曼光谱研究表明，软模降低到较低的频率，并最终在60-70 at％Sr含量时消失，这证实了室温下四方相向立方相的转变温度。 PST薄膜在1 MHz下测得的介电常数在900-1500范围内，PST30薄膜获得最大值。对于具有不同组成的PST薄膜，室温下的损耗角正切在0.07-0.1的范围内。

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