首页> 外文会议>Ferroelectric Thin Films XII >PROPERTY IMPROVEMENT OF MOCVD-PZT FILMS DEPOSITED BELOW 400℃

【24h】

PROPERTY IMPROVEMENT OF MOCVD-PZT FILMS DEPOSITED BELOW 400℃

机译：沉积温度低于400℃的MOCVD-PZT薄膜的性能改进

获取原文

获取原文并翻译 | 示例

页面导航

摘要
著录项
相似文献
相关主题

摘要

RuO_2/(200-nm thick PZT)/RuO_2 capacitors were prepared by MOCVD. RuO_2 and PZT films were prepared at 350, and 395 and 445℃ from DER - O_2 and Pb(C_(11)H_(19)O_2)_2 - Zr(O· t-C_4H_9)_4 - Ti(O · i-C_3H_7)_4 - O_2 systems, respectively. Clear hysteresis loops originated to ferroelectricity was observed for the PZT films deposited at 445℃ but was not at 395℃. However, by the addition of 10-nm thick Pt layer prepared on the RuO_2 bottom electrode by e-beam evaporation, ferroelectricity above 30 μC/cm~2 in remanent polarization (P_r) was obtained for the PZT films deposited at 395℃. This shows that the existence of Pt layer improved the crystallinity of PZT phase. This capacitor shows hardly fatigue up to 1 x 10~(10) switching cycles, suggesting the fatigue free characteristics.

机译：通过MOCVD制备RuO_2 /（200nm厚的PZT）/ RuO_2电容器。从DER-O_2和Pb（C_（11_H_（19）O_2）_2-Zr（O·t-C_4H_9）_4-Ti（O·i-C_3H_7）分别在350、395和445℃制备RuO_2和PZT薄膜）_4-分别为O_2系统。在445℃沉积的PZT薄膜观察到明显的铁电磁滞回线，而在395℃则没有。然而，通过在电子束蒸发上在RuO_2底部电极上制备10 nm厚的Pt层，在395℃下沉积的PZT膜获得了剩余极化（P_r）大于30μC/ cm〜2的铁电。这表明Pt层的存在改善了PZT相的结晶度。该电容器在1 x 10〜（10）的开关周期内几乎没有疲劳，这表明它没有疲劳特性。

著录项

来源
《Ferroelectric Thin Films XII》|2003年|P.115-120|共6页
会议地点 Boston MA(US);Boston MA(US)
作者
Hiroshi Funakubo; Gouji Asano; Atsushi Nagai; Hitoshi Morioka; Shintaro Yokoyama; Tetsuo Shibutami; Noriaki Oshima; Kensuke Akiyama;
展开▼
作者单位

Department of Innovative and Engineered Materials, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Kanagawa, Japan;

展开▼
会议组织
原文格式 PDF
正文语种 eng
中图分类材料;
关键词

相似文献

外文文献
中文文献
专利

1. Effect of Starting Materials on Deposition Behavior, Crystal Structure and Electrical Properties of MOCVD-PZT Films [J] . Hiroshi Funakubo, Tomohiko Ozeki Key Engineering Materials . 2003,第期

机译：原材料对MOCVD-PZT薄膜沉积行为，晶体结构和电性能的影响
2. Improvement of the photocatalytic degradation property of atomic layer deposited ZnO thin films: the interplay between film properties and functional performances [J] . Roge V., Bahlawane N., Lamblin G., Journal of Materials Chemistry, A. Materials for energy and sustainability . 2015,第21期

机译：原子层沉积ZnO薄膜光催化降解性能的改善：膜性能与功能性能的相互作用
3. Role of substrate temperature on the structural, optoelectronic and morphological properties of (400) oriented indium tin oxide thin films deposited using RF sputtering technique [J] . V. Malathy, S. Sivaranjani, V. S. Vidhya, Journal of materials science . 2010,第12期

机译：衬底温度对使用RF溅射技术沉积的（400）取向铟锡氧化物薄膜的结构，光电和形态特性的影响
4. PROPERTY IMPROVEMENT OF MOCVD-PZT FILMS DEPOSITED BELOW 400°C [C] . Hiroshi Funakubo, Gouji Asano, Atsushi Nagai, MRS Meeting . 2004

机译：MOCVD-PZT薄膜的性质改进沉积在400°C以下
5. Structure, mechanical properties, and thermal properties of sputter-deposited nitride and oxide superlattice thin films [D] . Yashar, Philip 1998

机译：溅射沉积的氮化物和氧化物超晶格薄膜的结构，力学性能和热性能
6. The Effect of Film Thickness on the Gas Sensing Properties of Ultra-Thin TiO2 Films Deposited by Atomic Layer Deposition [O] . Rachel L. Wilson, Cristian Eugen Simion, Christopher S. Blackman, 2018

机译：膜厚对原子层沉积超薄TiO2薄膜气敏特性的影响
7. Improvement of the Cycle Property of Binder-Free LiCoO₂ Positive Electrode Film Deposited via the Pulsed Electrophoretic Deposition [O] . Hidetoshi Miyazaki, Yu Mimaru, Yuki Makinose, 2019

机译：通过脉冲电泳沉积沉积的粘合剂LiCoO _{2 / sum>正极膜的循环性能改善}

PROPERTY IMPROVEMENT OF MOCVD-PZT FILMS DEPOSITED BELOW 400℃

摘要

著录项

相似文献

相关主题

期刊订阅