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首页> 外文会议>Ferroelectric Thin Films XII >Investigation of Retention Properties for YMnO_3 Based Metal/Ferroelectric/Insulator/Semiconductor Capacitors
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Investigation of Retention Properties for YMnO_3 Based Metal/Ferroelectric/Insulator/Semiconductor Capacitors

机译：YMnO_3基金属/铁电/绝缘子/半导体电容器的保持性能研究

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The memory retention properties of Pt/YMnO_3/Y_2O_3/Si capacitors were investigated for the application of ferroelectric gate transistors. The epitaxially grown Pt/YMnO_3/Y_2O_3/Si capacitors showed ferroelectric type hysteresis loop on the capacitance-voltage properties. Although the retention time of the as-deposited capacitors was ～10~3 s, it was prolonged up to 10~4 s when the leakage current density was reduced from 4x10~(-8) A/cm~2 to 2 x 10~(-9) A/cm~2 by the annealing under N_2 ambience. To reveal the relationship between the retention time and leakage current, the leakage current mechanism was investigated comparing several conduction mechanisms. It was found that the dominant leakage mechanisms at high and low electric fields were Poole-Frenkel emission from the Y_2O_3 layer and ohmic conduction, respectively. This result indicates that the leakage current was limited by the Y_2O_3 layer at high electric field and was mainly dominated by the amount of defects in the YMnO_3 layer at low electric field. From the pseudo isothermal capacitance transient spectroscopy (ICTS), it was determined that the trap density was in an order of 10~(15) cm~(-3). Since the variation of the leakage current by annealing was observed only in the low electric field region, it is suggested that the retention properties of the Pt/YMnO_3/Y_2O_3/Si capacitors was influenced by the amount of defects in the YMnO_3 layer.
机译：研究了Pt / YMnO_3 / Y_2O_3 / Si电容器在铁电栅晶体管上的存储保持特性。外延生长的Pt / YMnO_3 / Y_2O_3 / Si电容器在电容电压特性上表现出铁电型磁滞回线。尽管沉积后的电容器的保留时间为〜10〜3 s，但当泄漏电流密度从4x10〜（-8）A / cm〜2降低至2 x 10〜时，保留时间延长至10〜4 s。 （-9）在N_2气氛下通过退火得到A / cm〜2。为了揭示保留时间与漏电流之间的关系，研究了漏电流机理，并比较了几种导电机理。发现在高电场和低电场下，主要的泄漏机理分别是来自Y_2O_3层的Poole-Frenkel发射和欧姆传导。该结果表明，在高电场下，泄漏电流受到Y_2O_3层的限制，而在低电场下，泄漏电流主要受YMnO_3层中的缺陷数量的控制。根据伪等温电容瞬变光谱法（ICTS），可以确定陷阱密度约为10〜（15）cm〜（-3）。由于仅在低电场区域中观察到了退火引起的漏电流的变化，因此建议Pt / YMnO_3 / Y_2O_3 / Si电容器的保持特性受YMnO_3层中的缺陷量的影响。

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