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Lead deficient PST Thin Films on LSCO/SrTiO_3 by RF-Sputtering

机译：射频溅射在LSCO / SrTiO_3上的PST薄膜中的铅

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摘要

We have investigated the structural, chemical and electrical properties of films with Pb_(0.6)Sr_(0.4)TiO_3 (PST60) nominal composition grown on well texturized LSCO/SrTiO_3 (STO) substrates by RF-Sputtering. The crystal structure and electrical properties of the PST60 films are remarkably influenced by the texture characteristics of the LSCO films. The structural and ferroelectric characteristics of PST60 thin films are determined to evaluate the potential of this heterostructure for non-volatile memory applications. Epitaxy of LSCO films was confirmed before depositing PST60 films on the above mentioned substrates through 4-Circle X-Ray Diffraction analysis (θ/2θ, ω and φ scans). The XRD analysis performed on the ferroelectric PST60 layer showed that the films are textured and entirely perovskite phase. LSCO and PST60, crystallize in the perovskite structure and their lattice parameters are well matched. This fact renders favorable structural and chemical conditions for the growth of PST60 on LSCO. The electrical performance of the Pt/PST60/LSCO/SrTiO_3(001) capacitors was evaluated through Polarization-Voltage (P-V), Current-Voltage (Ⅰ-Ⅴ) and Fatigue measurements.
机译：我们已经研究了通过射频溅射在结构良好的LSCO / SrTiO_3（STO）衬底上生长的标称组成为Pb_（0.6）Sr_（0.4）TiO_3（PST60）的薄膜的结构，化学和电学性质。 PST60膜的晶体结构和电性能受LSCO膜的织构特性显着影响。确定PST60薄膜的结构和铁电特性，以评估这种异质结构在非易失性存储器应用中的潜力。通过4-圆X射线衍射分析（θ/2θ，ω和φ扫描）在上述基板上沉积PST60膜之前，确认了LSCO膜的外延。在铁电PST60层上进行的XRD分析表明，该膜具有织构和完全钙钛矿相。 LSCO和PST60在钙钛矿结构中结晶，并且其晶格参数完全匹配。这一事实为LSCO上PST60的生长提供了有利的结构和化学条件。通过极化电压（P-V），电流电压（Ⅰ-Ⅴ）和疲劳测量来评估Pt / PST60 / LSCO / SrTiO_3（001）电容器的电性能。

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