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首页> 外文会议>Film silicon science and technology >Impact on Thin Film Silicon Properties and Solar Cell Parameters of Texture Generated by LaserAnnealing and Chemical Etching of ZnO:Al
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Impact on Thin Film Silicon Properties and Solar Cell Parameters of Texture Generated by LaserAnnealing and Chemical Etching of ZnO:Al

机译：ZnO：Al的激光退火和化学刻蚀对薄膜硅性能和太阳能电池参数的影响

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摘要

The use of a laser annealing and chemical texturing process (dubbed the LaText process) on room-temperature sputtered ZnO:Al has been shown to generate unusually high haze properties, favorable for thin film silicon solar cells.This is due to the melting of the ZnO:Al layer by the XeCl laser, and the formation of crystalline domains onthe surface, for which the grains and grain boundaries are subsequently etched at different rates. The unusual surface morphology produced through this process can strongly impact the nature of the amorphous or microcrystalline silicon material deposited thereupon. In this paper, we report on results for amorphous silicon devices, for which the surface texture is seen to slightly impact thelight absorption in the material, but more interestingly, also the light-induced degradation of the cells.For co-deposited cells, devices deposited on surfaces with the characteristic "LaText" morphologyundergo a much lesser degradation. Furthermore, the decreased degree of degradation coincides with a notable shift in the Raman scattering peak. This provides a rapid diagnostic for testing multiple textures and deposition parameters.
机译：事实证明，在室温溅射的ZnO：Al上使用激光退火和化学变形工艺（称为LaText工艺）会产生非常高的雾度特性，这对薄膜硅太阳能电池有利。通过XeCl激光形成ZnO：Al层，并在表面形成晶畴，随后以不同的速率蚀刻其晶粒和晶界。通过该过程产生的异常表面形态会强烈影响沉积在其上的非晶或微晶硅材料的性质。在本文中，我们报告了非晶硅器件的结果，这些非晶硅器件的表面纹理被认为会稍微影响材料中的光吸收，但更有趣的是，还会引起光诱导的电池降解。对于共沉积电池，器件沉积在具有“ LaText”特征形态的表面上的降解要小得多。此外，降低的降解程度与拉曼散射峰的明显偏移相吻合。这为测试多个纹理和沉积参数提供了快速诊断。

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  • 会议地点 San Francisco CA(US)
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    Rym Boukhicha; Erik Johnson; D. Daineka; Antoine Michel; J.F. Lerat; Thierry Emeraud; Pere Roca i Cabarrocas;

  • 作者单位

    CNRS, LPICM, Ecole Polytechnique, 91128 Palaiseau, France;

    CNRS, LPICM, Ecole Polytechnique, 91128 Palaiseau, France;

    CNRS, LPICM, Ecole Polytechnique, 91128 Palaiseau, France;

    CNRS, LPICM, Ecole Polytechnique, 91128 Palaiseau, France;

    Excico Group NV, KempischeSteenweg 305/2, B-3500 Hasselt, Belgium;

    Excico Group NV, KempischeSteenweg 305/2, B-3500 Hasselt, Belgium;

    CNRS, LPICM, Ecole Polytechnique, 91128 Palaiseau, France;

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