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首页> 外文会议>Film silicon science and technology >Emission spectra study of plasma enhanced chemical vapor deposition of intrinsic, n~+, and p~+ amorphous silicon thin films
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Emission spectra study of plasma enhanced chemical vapor deposition of intrinsic, n~+, and p~+ amorphous silicon thin films

机译：等离子体增强本征，n〜+和p〜+非晶硅薄膜的化学气相沉积的发射光谱研究

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摘要

The PECVD intrinsic, n~+ and p~+ a-Si:H thin film deposition processes have been studied by the optical emission spectroscope to monitor the plasma phase chemistry. Process parameters, such as the plasma power, pressure, and gas flow rate, were correlated to SiH~*, H_α~*, and H_β~* optical intensities. For all films, the deposition rate increases with the increase of the SiH~* intensity. For the doped films, the H_α~*/siH~* ratio is a critical factor affecting the resistivity. The existence of PH_3 or B_2H_6 in the feed stream enhances the deposition rate. Changes of the free radicals intensities can be used to explain variation of film characteristics under different deposition conditions.
机译：利用光发射光谱仪研究了PECVD的本征，n〜+和p〜+ a-Si：H薄膜沉积工艺，以监测等离子体相的化学性质。等离子功率，压力和气体流速等工艺参数与SiH〜*，H_α〜*和H_β〜*光强度相关。对于所有膜，沉积速率均随SiH〜*强度的增加而增加。对于掺杂的薄膜，H_α〜* / siH〜*比是影响电阻率的关键因素。进料流中PH_3或B_2H_6的存在提高了沉积速率。自由基强度的变化可以用来解释在不同沉积条件下薄膜特性的变化。

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  • 来源
  • 会议地点 San Francisco CA(US)
  • 作者

    I-Syuan Lee; Yue Kuo;

  • 作者单位

    Thin Film Nano Microelectronics Research Laboratory, Texas AM University, College Station, TX, 77843-3122;

    Thin Film Nano Microelectronics Research Laboratory, Texas AM University, College Station, TX, 77843-3122;

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