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METHOD OF CRYSTALLIZING HYDRID AMORPHOUS SILICON THIN FILM FORMED BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION USING ELECTRON BEAM, METHOD OF MANUFACTURING POLYCRYSTALLINE SILICON THIN FILM AND POLYCRYSTALLINE SILICON THIN FILM MANUFACTURED USING THE SAME
METHOD OF CRYSTALLIZING HYDRID AMORPHOUS SILICON THIN FILM FORMED BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION USING ELECTRON BEAM, METHOD OF MANUFACTURING POLYCRYSTALLINE SILICON THIN FILM AND POLYCRYSTALLINE SILICON THIN FILM MANUFACTURED USING THE SAME
An embodiment of the present invention relates to a method for crystallizing a hydride amorphous silicon thin film formed by plasma enhanced chemical vapor deposition using an electron beam, a method for manufacturing a polycrystalline silicon thin film solar cell by using the same, and the polycrystalline silicon thin film solar cell. A technical problem to be solved is to form a boron-doped amorphous silicon layer by using plasma enhanced chemical vapor deposition and crystallize an amorphous silicon layer by using an electron beam, so as to increase a crystallization fraction and facilitate the increase in the quality of products. A method for crystallizing a hydride amorphous silicon thin film formed by plasma enhanced chemical vapor deposition using an electron beam according to an embodiment of the present invention comprises the steps of: preparing a substrate; forming a hydride amorphous silicon layer on the surface of the substrate by plasma enhanced chemical vapor deposition; forming a polycrystalline silicon layer by irradiating an electron beam on the hydride amorphous silicon layer and crystallizing the hydride amorphous silicon layer. The electron beam is made up of electrons separated from argon gas by plasma.
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