Amorphous Silicon Film Deposition by Low Temperature Catalytic Chemical Vapor Deposition ( < 150℃) and Laser Crystallization for Polycrystalline Silicon Thin-Film Transistor Application

Sung-Hyun LEE; Wan-Shick HONG; Jong-Man KIM; Hyuck LIM; Kuyng-Bae PARK; Chul-Lae CHO; Kyung-Eun LEE; Do-Young KIM; Ji-Sim JUNG; Jang-Yeon KWON; Takashi NOGUCHI

首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters & Express Letters >Amorphous Silicon Film Deposition by Low Temperature Catalytic Chemical Vapor Deposition ( < 150℃) and Laser Crystallization for Polycrystalline Silicon Thin-Film Transistor Application

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Amorphous Silicon Film Deposition by Low Temperature Catalytic Chemical Vapor Deposition ( < 150℃) and Laser Crystallization for Polycrystalline Silicon Thin-Film Transistor Application

机译：低温催化化学气相沉积（<150℃）和激光晶化的非晶硅膜沉积在多晶硅薄膜晶体管中的应用

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We deposited amorphous silicon (a-Si) films below 150℃ with a custom-designed catalytic chemical vapor deposition (Cat-CVD) system. The hydrogen content of the films was controlled at less than 1.5 at. %. Excimer laser crystallization was performed without the preliminary dehydrogenation process. Crystallization occurred at a laser energy density above 70 mJ/ cm~2. Thin-film transistors (TFTs) were fabricated while the entire process temperatures were maintained at below 200 ℃. We obtained a field-effect mobility of higher than 100 cm~2/(V s) and a sub-threshold slope of 116 mV/dec. The a-Si film prepared by a low temperature Cat-CVD is a promising candidate for polycrystalline silicon TFTs of the active matrix display.

机译：我们使用定制设计的催化化学气相沉积（Cat-CVD）系统在150℃以下沉积非晶硅（a-Si）膜。膜的氢含量控制在小于1.5at。％。％。准分子激光结晶无需进行预脱氢过程即可进行。在高于70 mJ / cm〜2的激光能量密度下发生结晶。在整个过程温度保持在200℃以下的同时，制造了薄膜晶体管（TFT）。我们获得了高于100 cm〜2 /（V s）的场效应迁移率和116 mV / dec的亚阈值斜率。通过低温Cat-CVD制备的a-Si膜是有源矩阵显示器的多晶硅TFT的有希望的候选者。

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来源
《Japanese Journal of Applied Physics. Part 2, Letters & Express Letters》 |2006年第11期|p.L227-L229|共3页
作者
Sung-Hyun LEE; Wan-Shick HONG; Jong-Man KIM; Hyuck LIM; Kuyng-Bae PARK; Chul-Lae CHO; Kyung-Eun LEE; Do-Young KIM; Ji-Sim JUNG; Jang-Yeon KWON; Takashi NOGUCHI;
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Department of Electronics Engineering, Sejong University, 98 Kunja-dong, Kwangjin-gu, Seoul 143-747, Korea;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
catalytic CVD (Cat-CVD); low temperature deposition; amorphous silicon (a-Si); hydrogen content (C_H); excimer laser annealing (ELA); polycrystalline silicon (poly-Si); thin film transistor (TFT);

机译：催化CVD（Cat-CVD）;低温沉积;非晶硅（a-Si）;氢含量（C_H）;准分子激光退火（ELA）;多晶硅（poly-Si）;薄膜晶体管（TFT）;

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1. Characteristics of laser annealing for amorphous Si films prepared by catalytic chemical vapor deposition and application to fabrication of polycrystalline Si thin-film transistors [J] . Atsushi Masuda, Yusuke Yogoro, Hideki Matsumura, 電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials . 2003,第6期

机译：催化化学气相沉积制备非晶硅膜的激光退火特性及其在多晶硅薄膜晶体管制造中的应用
2. Characteristics of laser annealing for amorphous Si films prepared by catalytic chemical vapor deposition and application to fabrication of polycrystalline Si thin-film transistors [J] . Atsushi Masuda, Yusuke Yogoro, Hideki Matsumura, 電子情報通信学会技術研究報告. 電子デバイス. Electron Devices . 2003,第4期

机译：催化化学气相沉积制备非晶硅膜的激光退火特性及其在多晶硅薄膜晶体管制造中的应用
3. Characteristics of laser annealing for amorphous Si films prepared by catalytic chemical vapor deposition and application to fabrication of polycrystalline Si thin-film transistors [J] . Atsushi Masuda, Yusuke Yogoro, Hideki Matsumura, 電子情報通信学会技術研究報告. 有機エレクトロニクス. Organic Material Electronics . 2003,第8期

机译：催化化学气相沉积制备非晶硅膜的激光退火特性及其在多晶硅薄膜晶体管制造中的应用
4. Reaction processex for low temperature (<150 deg) plasma enhnaced deposition of hydrogenated amorphous silicon thin-film transistors on transparent plastic substrates [C] . Gregory N.Parsons, Chien-Sheng Yang, Tonya M.Klein, Flat-panel display materials-1998 . 1998

机译：低温（<150度）等离子体增强氢化非晶硅薄膜晶体管在透明塑料基板上的反应过程
5. Plasma-enhanced chemical vapor deposition issues for amorphous silicon thin-film transistors for active-matrix liquid crystal displays [D] . Sherman, Steven Robert 1997

机译：用于有源矩阵液晶显示器的非晶硅薄膜晶体管的等离子体增强化学气相沉积问题
6. Improvement in pH Sensitivity of Low-Temperature Polycrystalline-Silicon Thin-Film Transistor Sensors Using H2 Sintering [O] . Li-Chen Yen, Ming-Tsyr Tang, Fang-Yu Chang, 2014

机译：使用H2烧结改善低温多晶硅薄膜晶体管传感器的pH敏感性
7. Publisher's Note: “Effect of deposition temperature on electron-beam evaporated polycrystalline silicon thin-film and crystallized by diode laser” Appl. Phys. Lett. 104, 242102 (2014) [O] . J. Yun, S. Varlamov, J. Huang, 2015

机译：出版商的注意事项：“沉积温度对电子束蒸发的多晶硅薄膜薄膜的影响，二极管激光器结晶”苹果。物理。吧。 104,242102（2014）
8. Laser Photochemical Growth of Amorphous Silicon at Low Temperatures and Comparison with Thermal Chemical Vapor Deposition [R] . Eres, D. , Lowndes, D. H. , Geohegan, D. B. , 1987

机译：低温下非晶硅的激光光化学生长及热化学气相沉积的比较

Amorphous Silicon Film Deposition by Low Temperature Catalytic Chemical Vapor Deposition ( < 150℃) and Laser Crystallization for Polycrystalline Silicon Thin-Film Transistor Application

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