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首页> 外文会议>First International Conference on Artificial intelligence, modelling amp; simulation >Mitigating Breakdown Voltage with Dual Channel Vertical Strained SiGe Impact Ionization MOSFET (VESIMOS)
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Mitigating Breakdown Voltage with Dual Channel Vertical Strained SiGe Impact Ionization MOSFET (VESIMOS)

机译：利用双通道垂直应变SiGe冲击电离MOSFET（VESIMOS）降低击穿电压

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摘要

The Single and Dual Strained SiGe layer for Vertical Strained Silicon Germanium (SiGe) Impact Ionization MOSFET (VESIMOS) have been successfully analyzed in this paper. It is found that drain current for single (SC) and dual channel (DC) VESIMOS were increased sharply initially due to the presence of Germanium. Germanium has high impact ionization rates to ensure that the transition from OFF state to ON state is abrupt. However, breakdown voltage of the SC device was decreased from B=2.9V to 2.5V by increasing the composition of Ge from 10% to 30%. The same characteristics were found for DC VESIMOS where B= 2V had decreased to 1.6V by varying the Ge composition. In short, the breakdown voltage which affected by the appearance of second SiGe channel and Ge composition was justified. Apart from that, with the presence of second SiGe channel, the switching speed and I/I of the device were improved. It was found that the sub-threshold slope of SC and DC VESIMOS were inversely proportional to the breakdown voltage. Hence, DC VESIMOS can be promoted as extraordinary candidate for low power nanoelectronics device.
机译：本文成功地对垂直应变硅锗（SiGe）冲击电离MOSFET（VESIMOS）的单应变和双应变SiGe层进行了分析。发现由于锗的存在，单通道（SC）和双通道（DC）VESIMOS的漏极电流最初急剧增加。锗具有很高的碰撞电离速率，可确保从OFF状态突然转变为ON状态。然而，通过将Ge的组成从10％增加到30％，SC装置的击穿电压从B = 2.9V降低到2.5V。对于DC VESIMOS，发现了相同的特性，其中B = 2V通过改变Ge成分已降至1.6V。简而言之，证明了受第二SiGe沟道的外观和Ge组成影响的击穿电压。除此之外，由于有了第二个SiGe通道，器件的开关速度和I / I也得到了改善。发现SC和DC VESIMOS的亚阈值斜率与击穿电压成反比。因此，可以将DC VESIMOS推广为低功率纳米电子器件的非凡候选者。

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