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Low Temperature Poly-Si TFT Technology

机译：低温多晶硅TFT技术

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Low temperature poly-Si TFT technology is reviewed and is discussed from a view point of device, fabrication process, and its possibility as FPD (Flat Panel Display) application. After the appearance of crystallization technique of SPC (Solid Phase Crystallization) using FA (Furnace Annealing) or ELA (Excimer Laser Annealing) using UV (Ultra-Violet) beam, the electronic property of poly-Si thin-film, which relates to the crystalinity of the grains, was improved drastically, and the process temperature for the TFT fabrication had been reduced below 600℃ down to 400℃. As a result, improvement of device characteristic of poly-Si TFT such as an enhancement of carrier mobility or a reduction of leakage current has been studied intensively for the application to FPD (Flat Panel Display) on glass. Currently, extensive study is being done in order to realize a more functional SOG (System on Glass). By reducing the TFT process temperature down to 200℃ or below and by modifying a design for the device structure or the circuit in the pixel, O-LED (Organic LED) FPD addressed by uniform poly-Si TFTs is expected to mount on flexible plastic substrate such as on PES (PolyEtherSulphone). The poly-Si TFT has a possibility to develop as a smart system on plastic panel for unique applications as well as the conventional Si LSI in the ubiquitous IT (Information Technology) era.
机译：从器件，制造工艺及其作为FPD（平板显示器）应用的可能性的角度对低温多晶硅TFT技术进行了回顾和讨论。在出现使用FA（炉退火）或使用UV（紫外线）光束的ELA（准分子激光退火）的SPC（固相结晶）的结晶技术之后，多晶硅薄膜的电子特性与晶粒的结晶度得到了极大的改善，TFT制造的工艺温度从600℃以下降低到400℃。结果，为了将其应用于玻璃上的FPD（平板显示器），已经深入研究了诸如提高载流子迁移率或减小漏电流之类的多晶硅TFT的器件特性。当前，正在进行广泛的研究以实现功能更强大的SOG（玻璃上系统）。通过将TFT的制程温度降低到200℃或更低，并通过修改像素的器件结构或电路的设计，有望将由均匀的多晶硅TFT寻址的O-LED（有机LED）FPD安装在柔性塑料上基材，例如在PES（PolyEtherSulphone）上。在无处不在的IT（信息技术）时代，多晶硅Si TFT有可能发展成为一种塑料面板上的智能系统，以用于独特的应用以及传统的Si LSI。

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