MANUFACTURE METHOD OF LOW TEMPERATURE POLY-SILICON TFT SUBSTRATE AND LOW TEMPERATURE POLY-SILICON TFT SUBSTRATE

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• 2. 低温多晶硅TFT基板的制作方法及低温多晶硅TFT基板 [P] . 中国专利： CN105514035B . 2018.11.20
• 3. LOW-TEMPERATURE POLY-SILICON MANUFACTURING METHOD, METHOD FOR MANUFACTURING TFT SUBSTRATE BY USING LOW-TEMPERATURE POLY-SILICON MANUFACTURING METHOD, AND TFT SUBSTRATE STRUCTURE [P] . 世界知识产权组织专利： WO2016004665A1 . 2016-01-14

  机译： 低温多晶硅制造方法，利用低温多晶硅制造方法制造TFT基板的方法以及TFT基板结构

• 4. Manufacture method of low temperature poly-silicon TFT substrate and low temperature poly-silicon TFT substrate [P] . 美国专利： US10269925B2 . 2019-04-23

  机译： 低温多晶硅薄膜晶体管基板的制造方法及低温多晶硅薄膜晶体管基板

• 5. MANUFACTURE METHOD OF LOW TEMPERATURE POLY-SILICON TFT SUBSTRATE AND LOW TEMPERATURE POLY-SILICON TFT SUBSTRATE [P] . 美国专利： US2017221929A1 . 2017-08-03

  机译： 低温多晶硅TFT基板的制造方法及低温多晶硅TFT基板的制造方法

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