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Technology and cost modeling of hydrogenated amorphous silicon and low-temperature poly-silicon thin film transistor liquid crystal display manufacturing.

机译：氢化非晶硅和低温多晶硅薄膜晶体管液晶显示器制造的技术和成本建模。

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Amorphous-Silicon Thin-Film Transistor Liquid Crystal Displays (a-Si TFT-LCDs) are finding large growth opportunities outside of portable notebooks in monitor, consumer, and wireless applications and are approaching a {dollar}20B market size. While a-Si LCD's meet the technical requirements for many current flat panel display applications, the manufacturing cost of a-Si TFT LCD's remains a major barrier to market growth and presents an opportunity for an alternative flat panel display technology.; In this work, we describe a new methodology for calculating the cost of TFT LCD manufacturing as function of plant capacity. The methodology allows us to separate the TFT LCD manufacturing cost into a component that is purely a function of the process flow and thereby readily allows for making cost comparisons between alternative display technologies independent of plant size and operating policy. We model the cost per display and the economies of scale for the first, second, and third Generations of a-Si TFT LCD manufacturing. We determine the impact of the evolution of process flow, equipment productivity, yield, and material costs on the cost of display manufacturing and economies of scale.; Low temperature poly-Silicon TFT (LT p-Si) is a promising TFT technology because it has carrier mobilities two orders of magnitude higher than of an a-Si TFTs thereby allowing for the monolithic fabrication of the driver circuitry and a reduction in the module component and assembly costs. Driver ICs represent a significant cost of a-Si TFT-LCD's and will remain so with the move toward higher resolution displays. It has been widely believed that LT p-Si would only be applied to the small displays (less than 6-in) because of the greater complexity of its TFT process and the less mature state of several LT p-Si processes. To model the cost of LT p-Si we consider several different process flows and develop a TFT array yield model that takes into account the additional process complexity and critical area of integrating the driver circuitry. We present results for the cost of manufacturing of LT p-Si LCDs compared to a-Si LCD for diagonal sizes from 2 to 21-in. and examine the impact of the trend toward higher resolutions on the manufacturing costs of these two technologies.
机译：非晶硅薄膜晶体管液晶显示器（a-Si TFT-LCD）在监视器，消费类和无线应用中的便携式笔记本电脑之外发现了巨大的增长机会，并且正接近20美元的市场规模。虽然a-Si LCD可以满足当前许多平板显示应用的技术要求，但是a-Si TFT LCD的制造成本仍然是市场增长的主要障碍，并为替代平板显示技术提供了机会。在这项工作中，我们描述了一种新的方法来计算TFT LCD制造成本作为工厂产能的函数。该方法使我们能够将TFT LCD的制造成本分为一个纯粹是工艺流程的函数的组件，从而可以轻松地在不依赖工厂规模和运营政策的情况下，在替代显示技术之间进行成本比较。我们对第一代，第二代和第三代a-Si TFT LCD制造的显示器成本和规模经济进行建模。我们确定工艺流程，设备生产率，产量和材料成本的演变对显示器制造成本和规模经济的影响。低温多晶硅TFT（LT p-Si）是一种有前途的TFT技术，因为它的载流子迁移率比a-Si TFT高两个数量级，从而允许单片制造驱动器电路并减少模块数量零件和组装成本。驱动器IC代表了a-Si TFT-LCD的巨大成本，并且随着向更高分辨率显示器的发展，这种趋势将一直保持下去。人们普遍认为，LT p-Si仅会应用于小型显示器（小于6英寸），这是因为其TFT工艺的复杂性更高以及几种LT p-Si工艺的成熟度较低。为了对LT p-Si的成本建模，我们考虑了几种不同的工艺流程，并开发了一个TFT阵列良率模型，该模型考虑了额外的工艺复杂性和集成驱动器电路的关键区域。对于2至21英寸对角线尺寸的a-Si LCD，我们提供了LT p-Si LCD的制造成本结果。并研究高分辨率趋势对这两种技术的制造成本的影响。

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