Bevelled Sidewalls Formation and its Effect on the Light Output of GaInN MQWLED Chips

机译：斜面侧壁的形成及其对GaInN MQWLED芯片光输出的影响

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In this research, experiments and optical simulations have been carried out to study the effect of bevelled sidewalls and geometric shapes on the light extraction efficiency of GaN LED chips. Besides the conventional rectangular chips, hexagonal LED chips were experimentally processed for the fist time on a novel island-like GaN substrate. The bevelled sidewalls could be naturally formed on the chips during the growth of GaN islands by HVPE technology. The results of simulations and experiments are consistent with each other, and show that the output power of LED will be improved doubly when the sidewalls were beveled on the chip. The light output from hexagonal LED chips is also proved better than that from conventional rectangular chips.

机译：在这项研究中，已经进行了实验和光学模拟以研究倾斜的侧壁和几何形状对GaN LED芯片的光提取效率的影响。除传统的矩形芯片外，六角形LED芯片在新颖的岛状GaN衬底上进行了实验性处理。通过HVPE技术在GaN岛的生长过程中，可以自然地在芯片上自然地形成倾斜的侧壁。仿真和实验结果相互一致，表明当侧壁在芯片上倾斜时，LED的输出功率将提高两倍。六角形LED芯片的光输出也比常规的矩形芯片更好。

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来源
《Fourth International Conference on Solid State Lighting》|2004年|P.207-213|共7页
会议地点 DenverCO(US)
作者
J. T. Hsu; C.S.Huang; W.Y.Yeh; J. D. Tsay; Y. D. Guo; C.C. Chuo; C.Y.Lin; C.C. Sun; S. M. Pan;
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作者单位

Opto-Electronics Systems Laboratories (OES) Industrial Technology Research Institute (ITRI) 195 Sec.4, Chung Hsing Rd., Hsinchu 310, Taiwan, ROC;

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原文格式 PDF
正文语种 eng
中图分类晶体的光学性质;
关键词
GaN; solid state lighting; LED; compound semiconductor; HVPE; GaN substrate;

机译：GaN;固态照明; LED;复合半导体; HVPE; GaN基板;

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专利

1. Light output enhancement of GaN-based flip-chip light-emitting diodes fabricated with SiO_2/TiO_2 distributed Bragg reflector coated on mesa sidewall [J] . K. H. Baik, B. K. Min, J. Y. Kim, Journal of Applied Physics . 2010,第6期

机译：台面侧壁涂有SiO_2 / TiO_2分布布拉格反射器的GaN基倒装芯片发光二极管的光输出增强
2. Strong light-extraction enhancement in GaInN light-emitting diodes patterned with TiO2 micro-pillars with tapered sidewalls [J] . Ma Ming, Cho Jaehee, Fred Schubert E., Applied Physics Letters . 2012,第14期

机译：带有锥形侧壁的TiO2微柱构图的GaInN发光二极管具有很强的光提取能力
3. Enhanced output of flip-chip light-emitting diodes with a sidewall reflector [J] . Yanxu Zhu, Chen Xu, Xiaoli Da, Solid-State Electronics . 2007,第5期

机译：具有侧壁反射器的倒装芯片发光二极管的增强输出
4. Bevelled Sidewalls Formation and its Effect on the Light Output of GaInN MQWLED Chips [C] . J. T. Hsu, C.S.Huang, W.Y.Yeh, International Conference on Solid State Lighting . 2004

机译：倾斜的侧壁形成及其对GAINN MQWLED芯片的光输出的影响
5. Efficiency and Carrier Transport in Polarization-Matched GaInN-based Light-Emitting Diodes [D] . Xu, Jiuru. 2011

机译：极化匹配的基于GaInN的发光二极管的效率和载流子传输
6. Enhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing [O] . Fang-I Lai, Jui-Fu Yang 2013

机译：通过在p-GaN表面图案化光子准晶体和n侧侧壁粗糙化来增强GaN基发光二极管的光输出功率
7. Enhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing [O] . 2013

机译：通过在p-GaN表面图案化光子准晶体和n侧侧壁粗糙化来增强GaN基发光二极管的光输出功率

Bevelled Sidewalls Formation and its Effect on the Light Output of GaInN MQWLED Chips

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