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首页> 外文会议>Fourth International Conference on Solid State Lighting >Deep ultraviolet LEDs fabricated in AlInGaN using MEMOCVD
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Deep ultraviolet LEDs fabricated in AlInGaN using MEMOCVD

机译：使用MEMOCVD在AlInGaN中制造的深紫外LED

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In this paper we will present our recent work aimed at developing deep ultraviolet light-emitting diodes with emission from 250-280 nm. These devices were fabricated using AlGaN multiple quantum wells that were deposited on basal plane sapphire substrates using low-pressure MOCVD. Innovative MEMOCVD grown A1N buffer layers and AlN/AlGaN superalttices were also employed in the device structures to manage strain and allow the deposition of thick AlGaN layers, which was necessary to reduce the lateral spread resistance. Devices with square, multifinger and micro-LED geometries were fabricated and flip-chip mounted on A1N carriers for improved thermal management and light extraction. We have now succeeded in obtaining devices at 275 and 280 nm with cw powers in excess of 1.5 mW and pulsed powers well over 20 mW. Recently we have also succeeded in obtaining nearly milliwatt powers using an innovative micro-LED design at 250 nm. Now, for the first time, we also present dc operation of micro-pixel design deep UV LED.
机译：在本文中，我们将介绍我们的近期工作，旨在开发发射波长为250-280 nm的深紫外发光二极管。这些器件是使用AlGaN多量子阱制造的，这些阱通过低压MOCVD沉积在基面蓝宝石衬底上。在器件结构中还采用了创新的MEMOCVD生长的AlN缓冲层和AlN / AlGaN超晶格来控制应变并允许沉积厚的AlGaN层，这对于降低横向扩展电阻是必需的。制造了具有方形，多指和微型LED几何形状的器件，并将其倒装芯片安装在AlN载体上，以改善热管理和光提取。现在，我们已经成功地获得了275和280 nm的器件，其连续波功率超过1.5 mW，脉冲功率超过20 mW。最近，我们还使用创新的250 nm micro-LED设计成功获得了近毫瓦的功率。现在，我们也首次展示了微像素设计深紫外LED的直流工作。

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