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Effects of ordering on the optical properties of GaInP_2

机译：有序化对GaInP_2光学性质的影响

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摘要

GaInP_2 lattice-matched to GaAs or Ge plays an important role in state-of-the-art Ⅲ-Ⅴ multijunction solar cells. The fundamental band gap of constant-composition GaInP_2 can be varied by as much as 100meV in metal-organic chemical vapor deposition (MOCVD) grown material by adjusting growth parameters that affect the degree of Cu-Pt ordering. These changes in the band gap of GaInP_2 due to ordering can be exploited in the design of Ⅲ-Ⅴ solar cell devices. In order to accurately model the performance of these devices, accurate values of the optical constants of all layers are required. Previous literature reports of the optical properties of GaInP_2 have primarily focused on highly disordered material or higher energy transitions in ordered material. While it has been noted that ordered GaInP_2 material results in anisotropic optical properties, the bulk optical properties of GaInP_2 as a function of ordering have not been sufficiently recorded in the literature for good optical modeling of Ⅲ-Ⅴ solar cell devices. In this paper, we present the dielectric functions for a range of ordered/disordered GaInP_2 measured over the range 0.7-5.0 eV using spectroscopic ellipsometry. Data analysis of generalized ellipsometry data utilizing anisotropic multilayer models allows us to report accurate dielectric functions for both the ordinary and extraordinary optical axes.
机译：与InGaAs或Ge晶格匹配的GaInP_2在最新的Ⅲ-Ⅴ多结太阳能电池中起着重要作用。通过调整影响Cu-Pt有序度的生长参数，在金属有机化学气相沉积（MOCVD）生长材料中，恒定成分GaInP_2的基带隙可以变化100meV。 GaInP_2带隙因有序性而产生的这些变化可用于Ⅲ-Ⅴ型太阳能电池器件的设计中。为了准确地模拟这些设备的性能，需要所有层的光学常数的准确值。 GaInP_2光学性质的先前文献报道主要集中在高度无序的材料或有序材料中的更高能量跃迁。尽管已经注意到有序的GaInP_2材料会导致各向异性的光学性质，但是对于Ⅲ-Ⅴ型太阳能电池器件的良好光学建模，GaInP_2的整体光学性质作为有序的函数尚未在文献中充分记录。在本文中，我们介绍了使用光谱椭偏仪在0.7-5.0 eV范围内测得的有​​序/无序GaInP_2范围的介电函数。利用各向异性多层模型对广义椭圆偏振数据进行数据分析，使我们能够报告常规光轴和非常规光轴的准确介电函数。

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