Radiation damage effects on double-junction GaInP_2/GaAs solar cells

著录项

• 来源
  《Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms》 |2014年第1期|76-81|共6页
• 作者

  Wang Yueyuan; Hu Jianmin; Wu Yiyong; Xu Jianwen; Lu Jianfeng; Zhao Huijie; Qian Bin;

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• 作者单位

  Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China;

  Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China;

  School of Materials Science & Engineering, Harbin Institute of Technology, Harbin 150001, China;

  Shanghai Institute of Space Power Sources, Shanghai 200233, China;

  Shanghai Institute of Space Power Sources, Shanghai 200233, China;

  School of Materials Science & Engineering, Harbin Institute of Technology, Harbin 150001, China;

  Shanghai Institute of Space Power Sources, Shanghai 200233, China;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  GaInP_2/GaAs solar cells; Irradiation effects; Tunnel junction; Spectral response; Electrical properties;

  机译：GaInP_2 / GaAs太阳能电池;辐照效果;隧道交界处;光谱响应电性能;