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首页> 外文期刊>Photovoltaics, IEEE Journal of >1.25-eV GaAsSbN/Ge Double-Junction Solar Cell Grown by Metalorganic Vapor Phase Epitaxy for High Efficiency Multijunction Solar Cell Application
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1.25-eV GaAsSbN/Ge Double-Junction Solar Cell Grown by Metalorganic Vapor Phase Epitaxy for High Efficiency Multijunction Solar Cell Application

机译：金属有机气相外延生长的1.25 eV GaAsSbN / Ge双结太阳能电池，用于高效多结太阳能电池应用

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摘要

Dilute-nitride–antimonide materials grown by metalorganic vapor phase epitaxy (MOVPE) with bandgap energies of 1.25 eV have been integrated into solar cell structures employing a Ge bottom cell on Ge substrate. Single homo- and heterojunction solar cells employing narrow bandgap GaAsSbN (E $_{g}$ ∼ 1.25 eV) are grown normally lattice-matched on a GaAs substrate, using MOVPE. Homojunction solar cell structures were realized by employing GaAsSbN material with low carbon background concentration and Si doping to form a p junction. External quantum efficiency measurements in the range (870 nm–1000 nm) reveal that the efficiency of the homojunction solar cell is significantly improved over that of the heterojunction structure. The GaAsSbN homojunction cell was integrated with a Ge single-junction bottom cell on Ge substrate. Under AM1.5 direct illumination, the fabricated GaAsSbN (1.24 eV)/Ge double-junction solar cell with a 600-nm-thick GaAsSbN base layer exhibits $J_{rm sc}, V_{rm oc}$, FF, and efficiency values of 11.59 mA/cm $^{2}$, 0.83 V, 72.58%, and 7% with anti-reflection coating (ARC), respectively.
机译：通过带隙能为1.25 eV的金属有机气相外延（MOVPE）生长的稀氮化物-锑化物材料已集成到采用Ge衬底上的Ge底部电池的太阳能电池结构中。使用MOVPE，在GaAs衬底上以晶格匹配的方式生长采用窄带隙GaAsSbN（E $ _ {g} $〜1.25 eV）的单同质和异质结太阳能电池。通过使用低碳本底浓度的GaAsSbN材料和Si掺杂形成p / n结来实现同质结太阳能电池结构。在870 nm–1000 nm范围内的外部量子效率测量结果表明，同质结太阳能电池的效率大大高于异质结结构。 GaAsSbN同质结电池与Ge衬底上的Ge单结底部电池集成在一起。在AM1.5直接照明下，制造的具有600nm厚GaAsSbN基层的GaAsSbN（1.24 eV）/ Ge双结太阳能电池表现出$ J_ {rm sc}，V_ {rm oc} $，FF和效率防反射涂层（ARC）的最大阻值分别为11.59 mA / cm 2，$ 0.83 V，72.58％和7％。

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