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Stress Distribution Effect on a Stacked-Die QFN Package Manufacturing Processes

机译:应力分布对叠层QFN封装制造工艺的影响

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摘要

In the last decade, failure of microelectronic devices has become a prominent field of research all across the world. The results of this of failure analysis allow an engineer to choose package geometries and materials which reduce the risk of failure. This paper is meant to relate the stress effect on material properties during Quad Flat No-Leads (QFN) stacked-die packages manufacturing processes. To achieve the study, the finite element technique was used to perform an extensive structural analysis on a QFN package design once it was verified by related experiments. A QFN unit was developed in three dimensional geometry with various materials be will simulated in order to determine the location of failure. The induced stress results were also measured in the maximum value, indicating the low modulus and coefficient of thermal expansion (CTE) in the packaging material were important for reducing high stress during the manufacturing stages. However, numerical simulation demonstrated that the stress developments increased exponentially when the die attach temperature increased. Therefore, the induced stress can be relieved by having high die attach process temperature with an adequate bonding force and time. It was vital to control the induced stress in package materials during die attachment process for ensuring the reliability level of QFN packages.
机译:在过去的十年中,微电子设备的故障已成为全世界研究的一个突出领域。失效分析的结果使工程师可以选择降低失效风险的封装几何形状和材料。本文旨在将应力对四方扁平无铅(QFN)堆叠芯片封装制造过程中材料性能的影响。为了完成这项研究,一旦经过相关实验验证,就可以使用有限元技术对QFN封装设计进行广泛的结构分析。为了确定故障的位置,将在三维几何结构中开发一种QFN单元,并用各种材料进行模拟。诱导应力结果也以最大值测量,表明包装材料中的低模量和热膨胀系数(CTE)对于降低制造阶段的高应力很重要。然而,数值模拟表明,当芯片贴装温度升高时,应力发展呈指数增长。因此,可以通过具有足够的键合力和时间的高芯片贴装工艺温度来减轻诱发的应力。为了确保QFN封装的可靠性,控制芯片贴装过程中封装材料中的感应应力至关重要。

著录项

  • 来源
    《Fracture and strength of solids VII》|2010年|p.1273-1278|共6页
  • 会议地点 Kuala Lumpur(MY);Kuala Lumpur(MY)
  • 作者单位

    ASPAC Laboratory, Institute of Microengineering and Nanoelectronic (IMEN), Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor, MALAYSIA;

    ASPAC Laboratory, Institute of Microengineering and Nanoelectronic (IMEN), Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor, MALAYSIA;

    ASPAC Laboratory, Institute of Microengineering and Nanoelectronic (IMEN), Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor, MALAYSIA;

    ASPAC Laboratory, Institute of Microengineering and Nanoelectronic (IMEN), Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor, MALAYSIA;

    ASPAC Laboratory, Institute of Microengineering and Nanoelectronic (IMEN), Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor, MALAYSIA;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 工程材料一般性问题;
  • 关键词

    QFN packages; finite element; coefficient of thermal expansion; stress;

    机译:QFN封装;有限元;热膨胀系数;强调;

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