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Studies of electron trapping in Ⅲ-nitride semiconductors

机译：Ⅲ族氮化物半导体中电子俘获的研究

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Effects of electron irradiation on GaN and Al_xGa_(1-x)N doped with acceptor-forming species (Mg, C, Fe, and Mn) were studied by cathodoluminescence and electron beam induced current techniques. Low energy electron beam irradiation was shown to induce a systematic decay of the cathodoluminescence intensity, which is accompanied by increased electronic carrier diffusion length, indicating the increase of carrier lifetime. Temperature-dependent cathodoluminescence measurements allowed to estimate the activation energy for irradiation-induced effects, which was found to be comparable to the ionization energy of the dominant acceptor species. These observations are consistent with trapping of non-equilibrium electrons on deep, non-ionized acceptor levels. In (Al)GaN:Mg and GaN:C electrons are trapped by the ground state of the neutral acceptor atom, while in TM-doped compounds, electron irradiation-induced processes appear to involve a more energetically accessible excited states of the acceptors.
机译：通过阴极发光和电子束感应电流技术研究了电子辐照对掺入受主形成物种（Mg，C，Fe和Mn）的GaN和Al_xGa_（1-x）N的影响。低能量电子束辐照显示会引起阴极发光强度的系统衰减，伴随着电子载流子扩散长度的增加，表明载流子寿命的增加。与温度相关的阴极发光测量值可以估算辐射诱导效应的活化能，发现该活化能与主要受体物种的电离能相当。这些观察结果与在非电离的深受体水平上捕获非平衡电子是一致的。在（Al）GaN：Mg和GaN：C中，电子被中性受体原子的基态俘获，而在TM掺杂的化合物中，电子辐照诱导的过程似乎涉及受体上能量更易接近的激发态。

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