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Conductive atomic force microscopy study of MBE GaN films

机译：MBE GaN膜的导电原子力显微镜研究

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We have used the techniques of atomic force microscopy (AFM) and conductive AFM (C-AFM) to investigate the morphology and localized current conduction of GaN films grown by molecular beam epitaxy (MBE) on metal organic chemical vapor deposition (MOCVD) templates. The most common type of surface morphology consists of undulating spiral "hillocks" terminated by small pits. A low density of holes are interspersed between these hillocks with typical diameters of ～150 nm and densities on the order of 10~8 cm~(-2). For C-AFM measurements, a Pt-coated AFM tip was brought into contact with the GaN surface to form a microscopic Schottky contact. In reverse bias, C-AFM shows localized current leakage at the centers of approximately 10% of spiral hillocks, which are presumably associated with screw dislocations. Shifts in forward-bias turn-on voltages and changes in the conduction mechanism are observed in these defect regions. Local Ⅰ-Ⅴ curves indicate a Frenkel-Poole mechanism for forward conduction on defect regions.
机译：我们已经使用原子力显微镜（AFM）和导电原子力显微镜（C-AFM）的技术来研究通过分子束外延（MBE）在金属有机化学气相沉积（MOCVD）模板上生长的GaN膜的形貌和局部电流传导。表面形态的最常见类型是由小凹坑终止的起伏的螺旋形“小丘”。在这些小丘之间散布着低密度的小孔，典型直径约为150 nm，密度大约为10〜8 cm〜（-2）。对于C-AFM测量，将涂有Pt的AFM尖端与GaN表面接触，以形成微观的肖特基接触。在反向偏置下，C-AFM显示局部电流泄漏在螺旋形小丘的大约10％的中心处，这大概与螺丝错位有关。在这些缺陷区域中观察到正向偏置开启电压的变化和传导机制的变化。局部Ⅰ-Ⅴ曲线表明缺陷区域正向传导的Frenkel-Poole机制。

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