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Carrier dynamics-induced transient photoexcitation and energy deposition in femtosecond-laser irradiated GaAs

机译:飞秒激光辐照的砷化镓中载流子动力学引起的瞬态光激发和能量沉积

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In this work femtosecond laser photo-excitation of GaAs is studied numerically. The transient plasma densities photo-generated during the pumping IR fs-laser pulses were evaluated having in mind experimental data of time-resolved reflectivity measurements of transient bandgap shifts.rnTheoretical modeling employing quantum kinetic formalism based on a generalized Boltzmann-type equation, including one/multi-photon photo-excitation, Joule heating and free-carrier absorption, interband excitation, impact ionization, Auger recombination of electron-hole plasma, thermal exchange with the lattice, etc. is performed. For the first time the effect of enhancement of ionization by transient bandgap renormalization (BGR) is considered both experimentally and theoretically. The energy spectra of the electron distribution function and the time dependence of the electron density are calculated and the key role of BGR in the transient electron-hole plasma dynamics is pointed out.
机译:在这项工作中,对GaAs飞秒激光的光激发进行了数值研究。考虑到瞬态带隙位移的时间分辨反射率测量的实验数据,对在泵浦IR fs-激光脉冲过程中光生产生的瞬态等离子体密度进行了评估.rn基于量子Boltzmann型方程的量子动力学形式主义的理论模型包括进行/多光子光激发,焦耳加热和自由载流子吸收,带间激发,碰撞电离,电子-空穴等离子体的俄歇复合,与晶格的热交换等。首次在实验和理论上都考虑了通过瞬时带隙重整化(BGR)增强电离的效果。计算了电子分布函数的能谱和电子密度的时间依赖性,指出了BGR在瞬态电子-空穴等离子体动力学中的关键作用。

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