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首页> 外文会议>Gettering and defect engineering in semiconductor technology XVI >Orientation dependency of dislocation generation in Si growth process
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Orientation dependency of dislocation generation in Si growth process

机译：Si生长过程中位错产生的取向依赖性

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In an attempt to understand how and where dislocations are introduced into Si ingots by temperature gradients, bulk dislocation-free FZ crystals are exposed to temperature gradients similar to those in Bridgman Si crystal growth. This heat treatment introduces dislocations, which were analyzed using X-ray topography (XRT) and Scanning InfraRed Polariscopy (SIRP). Hereby, the orientation dependency is taken into account and ingots in (001) and (111) growth orientation are evaluated in this work. It can be found that the dislocation generation takes place at similar regions of the crystal and is independent of orientation, however, their propagation and multiplication differs. This leads to an overall different shape of the dislocation network. Especially intriguing are the long slip lines in the (111)-crystal, which cannot be found in the (001)-crystal. This suggests a different magnitude of slip propagation depending on the sample orientation. This effect should be explained by a different activation of slip systems and is discussed in the paper.
机译：为了理解如何通过温度梯度将位错引入到硅锭中以及在何处将位错引入，无块状无FZ晶体暴露于与Bridgman Si晶体生长相似的温度梯度下。这种热处理引入了位错，使用X射线形貌（XRT）和扫描红外偏振镜（SIRP）分析了位错。由此，考虑了取向依赖性，并且在这项工作中评估了（001）和（111）生长取向的铸锭。可以发现，位错的产生发生在晶体的相似区域，并且与取向无关，但是，它们的传播和繁殖是不同的。这导致位错网络的总体形状不同。特别令人感兴趣的是（111）晶体中的长滑线，而在（001）晶体中找不到。这表明取决于样品取向的滑动传播的幅度不同。应该通过滑动系统的不同激活来解释这种影响，并在本文中进行讨论。

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