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首页> 外文会议>Gettering and defect engineering in semiconductor technology XVI >Detection and Prevention of Palladium Contamination in Silicon Devices
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Detection and Prevention of Palladium Contamination in Silicon Devices

机译：硅器件中钯污染的检测与预防

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In this work we report the results of a set of experiments carried out to assess the ability of recombination lifetime measurements for the detection of palladium contamination in silicon. Palladium is found to be a very effective recombination center, so recombination lifetime measurements are a very sensitive method to detect palladium in silicon. The surface segregation of palladium was monitored by the reduction of its recombination activity in the silicon volume. The palladium segregation at the wafer surface was checked by selective etching, and by Transmission Electron Microscopy (TEM) and Energy Dispersive X-ray (EDX) analysis. After validating recombination lifetime measurements for palladium detection, we use these measurements to define suitable approaches to the prevention of palladium contamination of silicon devices. The efficiency of a diffusion barrier layer (silicon nitride) and of decontamination by wet cleaning are tested.
机译：在这项工作中，我们报告了一组旨在评估重组寿命测量能力以检测硅中钯污染的实验结果。人们发现钯是非常有效的重组中心，因此重组寿命测量是检测硅中钯的一种非常灵敏的方法。通过降低其在硅体积中的复合活性来监测钯的表面偏析。通过选择性蚀刻，透射电子显微镜（TEM）和能量色散X射线（EDX）分析检查了晶片表面上的钯偏析。在验证了用于钯检测的复合寿命测量值后，我们使用这些测量值定义了预防硅器件中钯污染的合适方法。测试了扩散阻挡层（氮化硅）的效率以及通过湿法清洁的去污效率。

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