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首页> 外文会议>Gettering and defect engineering in semiconductor technology XVI >Effect of Nitrogen-Doping on the Properties of Radiation Defect Centers in FZ Silicon
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Effect of Nitrogen-Doping on the Properties of Radiation Defect Centers in FZ Silicon

机译：氮掺杂对FZ硅辐射缺陷中心性能的影响

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摘要

High-resolution photoinduced transient spectroscopy (HRPITS) has been applied to determining the properties and concentrations of radiation defect centers formed in FZ silicon single crystals subjected to doping with phosphorus in neutron transmutation processes. The studies were performed immediately after the neutron irradiation on the samples with the resistivity of the order of 10~5 Ωcm. The preset target resistivity was around 2000 Ωcm. The N-doping effect on the material radiation damage has been demonstrated. It is shown that in the N-enriched material, the radiation defect centers with activation energies of 81, 125, 160, 185, and 390 meV are not observed and the concentrations of the defect centers with activation energies of 46, 84, 133,140, 265, 300, 380,460, and 546 meV are significantly lower than those in the N-free material. We also show that the majority of defect centers produced by the irradiation of FZ silicon with fast neutrons are also observed after neutron transmutation doping.
机译：高分辨率光致瞬态光谱法（HRPITS）已用于确定在中子trans变过程中经过磷掺杂的FZ硅单晶中形成的辐射缺陷中心的性质和浓度。在中子辐照后立即对样品进行研究，电阻率为10〜5Ωcm。预设目标电阻率约为2000Ωcm。已经证明了N掺杂对材料辐射损伤的影响。结果表明，在富氮材料中，未观察到激活能为81、125、160、185和390 meV的辐射缺陷中心，而激活能为46、84、133,140的缺陷集中在缺陷中心。 265、300、380,460和546 meV显着低于不含N的材料。我们还表明，在中子trans变掺杂后，也观察到了由快中子辐照FZ硅产生的大多数缺陷中心。

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  • 来源
  • 会议地点 Bad Staffelstein(DE)
  • 作者

    P. Kaminski; R. Kozłowski; B. Surma; M. Kozubal; Ch. Hindrichsen; T. Sveigaard; L. Jensen; M. Kwestarz; J. Jabłonski;

  • 作者单位

    Institute of Electronic Materials Technology, ul. Wolczynska 133, 01-919 Warszawa, Poland;

    Institute of Electronic Materials Technology, ul. Wolczynska 133, 01-919 Warszawa, Poland;

    Institute of Electronic Materials Technology, ul. Wolczynska 133, 01-919 Warszawa, Poland;

    Institute of Electronic Materials Technology, ul. Wolczynska 133, 01-919 Warszawa, Poland;

    Topsil Semiconductor Materials A/S, Siliciumvej 1, DK-3600 Frederikssund, Denmark;

    Topsil Semiconductor Materials A/S, Siliciumvej 1, DK-3600 Frederikssund, Denmark;

    Topsil Semiconductor Materials A/S, Siliciumvej 1, DK-3600 Frederikssund, Denmark;

    Topsil Semiconductor Materials SA, ul. Wolczynska 133, 01-919 Warszawa, Poland;

    Topsil Semiconductor Materials SA, ul. Wolczynska 133, 01-919 Warszawa, Poland;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    nitrogen-doping; radiation defect centers; FZ Si; HRPITS;

    机译：氮掺杂辐射缺陷中心； FZ Si； HRPITS;

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