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Analysis of EL emitted by LEDs on Si substrates containing GeSn/Ge multi quantum wells as active layers

机译:分析以GeSn / Ge多量子阱为有源层的Si衬底上LED发射的EL

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摘要

We analyzed multi quantum well light emitting diodes, consisting of ten alternating GeSn/Ge layers, were grown by molecular beam epitaxy on Si. The Ge barriers were 10 run thick and the GeSn wells were grown with 7 % Sn and thicknesses between 6 and 12 nm. Despite the high threading dislocation density in the range of 10~9 cm~(-2) the electroluminescence spectra measured at 300 and 80 K yield a broad and intensive luminescence band. Deconvolution revealed three major lines produced by the GeSn wells that can be interpreted in terms of quantum confinement. Biaxial compressive strain causes a splitting of light and heavy holes in the GeSn wells. We interpret the three lines to represent two direct lines, formed by transitions with the light and heavy hole band, respectively, and an indirect line.
机译:我们分析了由十个交替的GeSn / Ge层组成的多量子阱发光二极管,其通过在Si上进行分子束外延生长。 Ge势垒的厚度为10nm,并且生长的GeSn阱具有7%的Sn并且厚度在6至12nm之间。尽管在10〜9 cm〜(-2)范围内有高的位错密度,但在300 K和80 K下测得的电致发光光谱却产生了宽而密集的发光带。反卷积揭示了GeSn阱产生的三个主要谱系,这些谱系可以用量子约束来解释。双轴压缩应变导致GeSn井中的轻孔和重孔分裂。我们将三条直线解释为代表两条直线,分别由轻,重空穴带的过渡和一条间接线形成。

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  • 来源
  • 会议地点 Bad Staffelstein(DE)
  • 作者单位

    Institut fuer Physik und Chemie, Brandenburgische Technische Universitat (BTU)Cottbus-Senftenberg, Platz der Deutschen Einheit 1, 03046 Cottbus, Germany;

    Institut fuer Physik und Chemie, Brandenburgische Technische Universitat (BTU)Cottbus-Senftenberg, Platz der Deutschen Einheit 1, 03046 Cottbus, Germany;

    Institut fuer Physik und Chemie, Brandenburgische Technische Universitat (BTU)Cottbus-Senftenberg, Platz der Deutschen Einheit 1, 03046 Cottbus, Germany;

    lnstitut fuer Halbleitertechnik (IHT), Universitaet Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart,Germany;

    lnstitut fuer Halbleitertechnik (IHT), Universitaet Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart,Germany;

    lnstitut fuer Halbleitertechnik (IHT), Universitaet Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart,Germany;

    lnstitut fuer Halbleitertechnik (IHT), Universitaet Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart,Germany;

    Institut fuer Physik und Chemie, Brandenburgische Technische Universitat (BTU)Cottbus-Senftenberg, Platz der Deutschen Einheit 1, 03046 Cottbus, Germany,Leibniz-lnstitut fuer innovative Mikroelektronik (IHP), Im Technologiepark 25, 15236 Frankfurt (Oder), Germany;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Silicon Photonics; Germanium; Ge on Si; Ge_(1-x)Sn_x; Multi-Quantum-Well (MQW); Light Emitting Diodes (LED); Electroluminescence (EL);

    机译:硅光子学;锗;葛on Ge_(1-x)Sn_x;多量子阱(MQW);发光二极管(LED);电致发光(EL);

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