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Mossbauer Spectroscopy on Fe impurities in Si materials

机译:硅材料中铁杂质的Mossbauer光谱

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Based on a series of Moessbauer spectroscopic investigations on Fe impurities in p-type and n-type Si materials, we propose a new model for Fe impurities in Si matrix, consisting not only of interstitial Fe, but also substitutional Fe atoms with different charge states. Mossbauer spectroscopy enables us to observe directly these components which transform each other by changing external conditions such as under light illumination, under external voltage, and also under external stress. This means that not only interstitial Fe impurities, but also substitutional Fe impurities appear to be a source for producing "electrically active Fe impurities" in Si materials.
机译:基于对p型和n型Si材料中Fe杂质的一系列Moessbauer光谱研究,我们提出了一种新的Si基体中Fe杂质的模型,该模型不仅由间隙Fe组成,还包括具有不同电荷态的取代Fe原子。借助Mossbauer光谱,我们可以直接观察通过改变外部条件(例如在光照,外部电压以及外部应力下)而相互转换的这些组件。这意味着不仅间隙性Fe杂质而且替代性Fe杂质似乎都是在Si材料中产生“电活性Fe杂质”的来源。

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