Characterization of Si converters of beta-radiation in the scanning electron microscope

机译：扫描电子显微镜中β辐射Si转换器的表征

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The approach for imitation of beta radiation using the e-beam of scanning electron microscope (SEM) for semiconductor energy converter testing is proposed. It is based on the Monte-Carlo simulation of depth-dose dependence for beta-particles and a determination of collection probability from the EBIC measurements of collection efficiency dependence on beam energy. Experiments with the ~(63)Ni radiation source confirm that such approach allows to predict the efficiency of semiconductor structures for radiation energy conversion to electric power.

机译：提出了一种利用扫描电子显微镜（SEM）的电子束模仿β辐射的方法，用于半导体能量转换器的测试。它基于对β粒子的深度剂量依赖性的蒙特卡洛模拟，以及根据EBIC测量的收集效率对束能量的依赖来确定收集概率。〜（63）Ni辐射源的实验证实，这种方法可以预测将辐射能转换为电能的半导体结构的效率。

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来源
《Gettering and defect engineering in semiconductor technology XVI》|2015年|312-315|共4页
会议地点 Bad Staffelstein(DE)
作者
M.A. Polikarpov; E.B. Yakimov;
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作者单位

National Research Center Kurchatov Institute, Moscow, 123182 Russia;

Institute of Microelectronics Technology RAS, 142432, Chernogolovka, IPTM, Russia,National University of Science and Technology MISiS, Moscow, Russia;

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会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
Beta-voltaics; SEM; simulation;

机译：贝塔伏特;扫描电镜模拟;

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1. Characterization of Si convertors of beta-radiation in the scanning electron microscope [J] . M.A. Polikarpov, E.B. Yakimov Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2016,第Null期

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4. Characterization of Si convertors of beta-radiation in the scanning electron microscope [C] . M. A. Polikarpov, E. B. Yakimov International Conference on Gettering and Defect Engineering in Semiconductor Technology . 2016

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Characterization of Si converters of beta-radiation in the scanning electron microscope

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