Spin relaxation times of donor centers associated with lithium in monoisotopic ~(28)Si

著录项

• 来源
  《Gettering and defect engineering in semiconductor technology XVI》|2015年|322-326|共5页
• 会议地点 Bad Staffelstein(DE)
• 作者

  Alexander A. Ezhevskii; Alexandra P. Detochenko; Sergey A. Popkov; Anton A. Konakov; Andrey V. Soukhorukov; Davud V. Guseinov; Dmitry G. Zverev; Georgy V. Mamin; Nikolay V. Abrosimov; Helge Riemann;

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• 作者单位

  Lobachevsky State University of Nizhni Novgorod. Prosp. Gagarina 23, Nizhny Novgorod, Russia,603950;

  Lobachevsky State University of Nizhni Novgorod. Prosp. Gagarina 23, Nizhny Novgorod, Russia,603950;

  Lobachevsky State University of Nizhni Novgorod. Prosp. Gagarina 23, Nizhny Novgorod, Russia,603950;

  Lobachevsky State University of Nizhni Novgorod. Prosp. Gagarina 23, Nizhny Novgorod, Russia,603950;

  Lobachevsky State University of Nizhni Novgorod. Prosp. Gagarina 23, Nizhny Novgorod, Russia,603950;

  Lobachevsky State University of Nizhni Novgorod. Prosp. Gagarina 23, Nizhny Novgorod, Russia,603950;

  Kazan Federal University, Kremlevskaya str. 18, Kazan, Russia, 420008;

  Kazan Federal University, Kremlevskaya str. 18, Kazan, Russia, 420008;

  Leibniz Institute for Crystal Growth, Max-Born-Str, 2, Berlin, Germany, 12489;

  Leibniz Institute for Crystal Growth, Max-Born-Str, 2, Berlin, Germany, 12489;

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• 会议组织
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  monoisotopic silicon; shallow donors; spin-lattice relaxation; spin-orbit coupling,electron paramagnetic resonance;

  机译：单同位素硅浅层供体；自旋晶格弛豫自旋轨道耦合，电子顺磁共振;